extremely low leakage current fabricated with continuous p-n junction Kuan-Chih Huang, Rajendra Dahal, James J.-Q. Lu, Yaron Danon, and Ishwara B. Bhat Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3522, USA Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-35...

The goal of this study was to develop a non-contact method for determining the junction temperature of phosphorconverted white LEDs as a first step toward determining the useful life of systems using white LEDs. System manufacturers generally quote the same life values for their lighting systems that the LED manufacturers estimate for a single LED. However, the life of an LED system can be much...

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In this paper, we present a new, physically based 3-terminal model for diffused and ion-implanted resistors. The model accounts for the effects of geometry, temperature, and bias, and includes parasitic p-n junction diodes. The junction depletion capacitances are distributed to model high-frequency behavior accurately.

Chemical synapses are sites of contact and information transfer between a neuron and its partner cell. Each synapse is a specialized junction, where the presynaptic cell assembles machinery for the release of neurotransmitter, and the postsynaptic cell assembles components to receive and integrate this signal. Synapses also exhibit plasticity, during which synaptic function and/or structure are...

Based upon the quasi-equilibrium approximation, the validity of p-n junction modelling, has been experimentally investigated under synchronous electrical and optical excitation of silicon photo-diodes. The devices had areas of 8.2 mm and reverse bias saturation currents of the order of 10 A. Their current-voltage (I-V) response was exploited experimentally both in the dark and under various ill...

High aspect ratio p–n junction semiconductors have displayed great potential for emerging photovoltaics owing to enhanced properties such as improved light absorption or trapping effi ciency and facile carrier collection. [ 1–4 ] In the case of bottomup synthesized p–n junction nanowires, additional advantages come from their single-crystalline structure and reduced materials usage, coupled wit...

We demonstrate an abrupt and box-shaped n/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n/p-junction diodes at 400 ◦C–600 ◦C, based on the...

tuberculous spondylitis is not an uncommon disease of the spine. near one percent of all cases of spinal tuberculosis (tb) involves craniocervical junction. hypoglossal nerve palsy is not an uncommon neurological finding, but isolated involvement of the hypoglossal nerve is rare and limited to case reports or small case series. here, we report a case of craniocervical junction tuberculosis pres...

The electrical performances of the heterojunction of n-ZnO nanowires with p-Si substrate at the nanometer scale have been characterized using an ultrahigh-vacuum conducting atomic force microscopy. Compared with the expected values of 1.0–2.0 reported in p-n junction in the previous studies, the abnormally high diode ideality factor 2 was obtained. It elucidates that a ZnO–Si p-n junction can b...