We have modeled the field and space charge distributions in back-gate and top-gate nanowire field effect transistors by solving the three-dimensional Poisson's equation numerically. It is found that the geometry of the gate oxide, the semiconductivity of the nanowire, and the finite length of the device profoundly affect both the total amount and the spatial distribution of induced charges in t...

A twin-plane based nanowire growth mechanism is established using Au catalyzed Ge nanowire growth as a model system. Video-rate lattice-resolved environmental transmission electron microscopy shows a convex, V-shaped liquid catalyst-nanowire growth interface for a ⟨112⟩ growth direction that is composed of two Ge {111} planes that meet at a twin boundary. Unlike bulk crystals, the nanowire geom...

zno nanocrystalline thin films were synthesized using cathodic reduction of zn foil in aqueous electrolyte containing  zncl2 and h2o2, followed by annealing at 400 oc in the air. the x-ray diffraction pattern exhibited a set of well-defined diffraction peaks corresponding to the zno wurtzite phase. scanning electron microscope and transmission electron microscope images clearly revealed formati...

Controllable propagation of electromagnetic energy in plasmonic nanowaveguides is of great importance for building nanophotonic circuits. Here, we studied the routing of surface plasmons in silver nanowire structures by combining experiments and electromagnetic simulations. The superposition of different plasmon modes results in the tunable near field patterns of surface plasmons on the nanowir...

Simultaneous scanning Bragg contrast and small-angle ptychographic imaging of a single solar cell nanowire are demonstrated, using a nanofocused hard X-ray beam and two detectors. The 2.5 µm-long nanowire consists of a single-crystal InP core of 190 nm diameter, coated with amorphous SiO2 and polycrystalline indium tin oxide. The nanowire was selected and aligned in real space using the small-a...

Multicolor single InGaN/GaN dot-in-nanowire light emitting diodes (LEDs) were fabricated on the same substrate using selective area epitaxy. It is observed that the structural and optical properties of InGaN/GaN quantum dots depend critically on nanowire diameters. Photoluminescence emission of single InGaN/GaN dot-in-nanowire structures exhibits a consistent blueshift with increasing nanowire ...

Nanowires are arguably the most studied nanomaterial model to make functional devices and arrays. Although there is remarkable maturity in the chemical synthesis of complex nanowire structures, their integration and interfacing to macro systems with high yields and repeatability still require elaborate aligning, positioning and interfacing and post-synthesis techniques. Top-down fabrication met...

The field of vertical nanowire array-based applications in cell biology is growing rapidly and an increasing number of applications are being explored. These applications almost invariably rely on the physical properties of the nanowire arrays, creating a need for a better understanding of how their physical properties affect cell behaviour. Here, we investigate the effects of nanowire density ...

the magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. the magnetoresistance is calculated in the ballistic regime, within the landauer-büttiker formalism. it has been demonstrated that the conductance of a magnetic nanowire with double domain walls can ...

In this paper, for the first time, two-layer logic elements "NOT", "AND", "OR" and "NOR" were manufactured, in which heating element of a nanowire one layer is located place where heated another superconductive nearest NbN layer. The film thickness (5-7 nm) was used to form superconducting nanowires different layers, Al 2 O...