BACKGROUND Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to bone marrow transplant. It is involved in the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore measuring and monitoring the skin dose during the treatment is important. Two kinds of metal oxide semiconductor field effect transisto...

(RGD) circuits operating in very high frequency (VHF) switching is discussed. The specific RGD circuits are normally applied only for certain applications due to their design limitations and drawbacks. The isolation techniques must be considered to avoid mismatch and interruption of signals as well as the dead time delay, size of components and choice of optimized parameter values. Low conducti...

MOSFET is the most commonly used devices in DC-DC power converters, and its performance is important to the prognosis and health management of power. The paper proposes a degradation analysis model for MOSFET in DC-DC power converters. A method for detecting the degradation of MOSFET is also introduced. Simulations have shown that the method can predict deterioration in the performance of MOSFE...

A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOS...

An analytical model is proposed for the random dopant fluctuation (RDF) in a symmetric double-gate metal-oxidesemiconductor field-effect-transistor (DG MOSFET) in the subthreshold region. Unintended impurity dopants cannot be absolutely prevented during the device fabrication; hence, it is important to analytically model the fluctuations in the electrical characteristics caused by these impurit...

Gate dielectric leakage current becomes a serious concern as sub-20Å gate oxide prevails in advanced CMOS processes. Oxide this thin can conduct significant leakage current by various direct-tunneling mechanisms and degrade circuit performance. While the gate leakage current of MOS capacitors has been much studied, little has been reported on compact MOSFET modeling with gate leakage. In this w...

A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed compared to a conventional (C-MOSFET) using numerical TCAD simulation. Due the (HJD) located at mesa region, reverse recovery time charge of IHP-MOSFET decreased by 62.5% 85.7%, respectively. In addition, high breakdown voltage (BV) low maximum oxide electric field (EMOX) could be achieved ...

The device library in the standard circuit simulator (SPICE) lacks a gallium nitride based high-electron-mobility-transistor (GaN-HEMT) model, required for design and verification of power-electronic circuits. This paper shows that GaN-HEMTs can be modeled by selected equations from MOSFET LEVEL 3 model SPICE. A method is proposed extraction SPICE parameters these equations. parameter-extractio...