نتایج جستجو برای: metal contact
تعداد نتایج: 354205 فیلتر نتایج به سال:
Transition metal dichalcogenides (TMDCs) have been extensively explored for applications in electronic and optoelectronic devices due to their unique material properties. However, the presence of large contact resistances is still a fundamental challenge in the field. In this work, we study defect engineering by using a mild plasma treatment (He or H2) as an approach to reduce the contact resis...
co-precipitation procedure was applied in order to obtain different kinds of magnetic nanoadsobents for the removal of pb(ii) and cu(ii) toxic metal ions from wastewater samples. prepared nanoadsorbents were characterized by fourier transform infrared spectroscopy (ft-ir), x-ray diffractometer (xrd), scanning electron microscopy (sem) and thermogravimetric analysis (tga). the average sizes of t...
background lead is a toxic metal with a poor electrical conductivity. this metal can be hazardous and poisonous even in low concentrations. objectives the objective of this study is the evaluation of prosopis mimosaceae sawdust as a low-cost adsorbent for removal of the lead from effluents. materials and methods the experiment was conducted in a batch system and the effect of ph, the amount of ...
The need to elimination heavy metal from aqueous solutions cannot be over emphasized.Very studies have investigated the removal heavy metal from water. In this study a new magnetic nanocomposite of PEI on magnetized Sawdust (SD/MNP/PEI) was prepared. Investigations were conducted to study the adsorption behavior of heavy metal Zn (II) on the SD/MNP/PEI nanocomposite in aqueous medium by varying...
The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and conta...
Performance of graphene electronics is limited by contact resistance associated with the metal-graphene (M-G) interface, where unique transport challenges arise as carriers are injected from a 3D metal into a 2D-graphene sheet. In this work, enhanced carrier injection is experimentally achieved in graphene devices by forming cuts in the graphene within the contact regions. These cuts are orient...
We report the x-ray photocurrent response of a coplanar chemical vapor deposition diamond detector fabricated using a metal-less graphitic ohmic contact. Ion implantation of 70 keV boron ions to a dose of 2 1016 cm−2 was performed through a patterned photoresist to produce a coplanar graphitic contact structure. The device photocurrent showed a fast response to pulsed x-ray irradiation, and sho...
We investigate the full counting statistics of a voltage driven normal metal(N) superconductor (S) contact. In the low bias regime below the superconducting gap, the NS contact can be mapped onto a purely normal contact, albeit with doubled voltage and counting fields. Hence in this regime the transport characteristics can be obtained by the corresponding substitution of the normal metal result...
Ii bas long been known that when a metal is placed in contact with a semiconductor a rectUying contact often results. This rectmcation is a result of an energy barrier between the metal and the semiconductor. Jn order to form a nonrectUying or ohmic contact, two general approaches can be applied: either (1) the barrier energy can be reduced to a low enough value that the thermally excited curre...
Articles you may be interested in Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition Impact of top electrode on electrical stress reliability of metal-insulator-metal capacitor with amorphous ZrTiO 4 film Appl. Influence of the electrode material on Hf O 2 metal-insulator-metal capacitors High-temperature conduction behavior...
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