Owing to its well-known properties of possible power-noise match as well as superior noise performance, the inductively-degenerated low-noise amplifier is nowadays the most-widely used RF pre-amplifier topology. However, there is not much flexibility when setting the amplifier’s input impedance to match the source impedance, as for a given biasing condition, matching is achievable only for a pa...

In this paper, we present a 0.7 V low-noise amplifier(LNA) using monolithic transformer feedback to neutralize the gate-drain overlap capacitance of a field-effect transistor(FET). It is a single-ended amplifier implemented in 0.18-μm CMOS technology designing for 5-GHz wireless local-area networks (LANs). This LNA achieves a simulated power gain of 10.84 dB, noise figure(NF) of 2.4 dB, and inp...

A current reused low-noise amplifier (LNA) with gain compensated to extend the bandwidth and is designed for ultra-wideband (UWB) wireless receiver. The design consists of two cascode common-source amplifier and an output buffer which is implemented in 0.18um RF CMOS process. The LNA gives 13.1dB gain; 9.1GHz 3dB bandwidth (3.1-12.2GHz) while consuming 13.9mW through a 1.8V supply. Over the 3.1...

A cascode CMOS low noise amplifier (LNA) is presented along with the used design methodology and measurement results. The LNA works at 2.4 GHz with 14.5 dB voltage gain and 2.8 dB simulated noise figure (NF). Powered from a 1.8 V supply, the core measured current consumption is 2.76 mA. An output buffer was designed to match a 50 Ω load and its current consumption is 5.5 mA. The technology used...

Bluetooth Low Energy (BLE) is an advanced technology that has been designed as complementary technology to classic Bluetooth and also it is the lowest possible power wireless technology that can be designed and built. This paper provides an overview of bluetooth low energy technology and utilization of CMOS Low Noise Amplifier (LNA) for BLE applications. The aim of this paper is review and comp...

This paper reviews and analyzes four reported low noise amplifier (LNA) design techniques applied to the cascode topology based on CMOS technology: classical noise matching (CNM), simultaneous noise and input matching (SNIM), powerconstrained noise optimization (PCNO), and power-constrained simultaneous noise and input matching (PCSNIM) techniques. Very simple and insightful sets of noise param...

In this paper, a CMOS Multi-band LNA using High-Q active inductors load with a binary code band selector suitable for multi-standards wireless applications is proposed. Using an improved high-Q active inductor including two bits binary controlled code, the multi-band low noise amplifier operating at four different frequency bands is realized. The proposed amplifier is designed in TSMC 0.18-um C...

Low noise amplifier when simulated for system level configuration, the scattering matrix in general and scattering parameters in specific play vital role in performance of low noise amplifier for various frequency bands. In this paper the scattering parameter performance was analyzed for C-band for recent process technologies available for CMOS and BiCMOS for IEEE 802.11 b/g.

Tower mounted amplifiers (TMA) serve to lower the system noise figure (NF) in cellular base-stations. For performance reasons, the TMA is located as near to the receiving aerial as practical and has to be connected to the rest of the radio at the tower’s base by a long run of coaxial cable. The parameters critical to TMA performance are low NF for reasons of optimizing coverage area, high gain ...