نتایج جستجو برای: low band gap

تعداد نتایج: 1423945  

2009
A. Rostami S. Matloub

In this paper, for developing analytical and semi-analytical methods to evaluate band structure in photonic quasicrystals the perturbation theory is examined. It is shown that more isotropic and complete photonic band gap can be observed under low dielectric contrast for photonic quasicrystals in comparison with ordinary crystals and because of this feature of photonic quasicrystals, perturbati...

2007
Lin Gu Vesna Srot Wilfried Sigle Christoph Koch Peter A. van Aken

With the development of monochromators for transmission electron microscopes, valence electron energy-loss spectroscopy (VEELS) has become a powerful technique to study the band structure of materials with high spatial resolution. However, artefacts such as Cerenkov radiation and surface effects pose a limit for interpretation of the low-loss spectra; also the inelastic delocalisation restricts...

2013
Matthew David

[email protected] Abstract – The CdO thin films were deposited using NaOH as the complexing agent by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The UV-VIS-NIR spectroscopy was used for film characterization. The deposited CdO thin film shows high absorbance in the UV region and low in the visible to near IR region of the spectroscopy. The energy band gap of the deposi...

M.N. Bennani Mohamed Bouachrine Mohamed Hamidi N. Belghiti Si Mohamed Bouzzine

The research in the organic π-conjugated molecules and polymers based on thiophenehas become one of the most interesting topics in the field of chemistry physics and materials science. These compounds have become the most promising materials for the optoelectronic device technology.. The use of low band gap materials is a viable method for better harvesting of the solar spectrum and increasing ...

Journal: :international journal of nano dimension 0
n. bahrami panah department of chemistry, payame noor university, p.o. box. 19395-3697, tehran, iran. r. vaziri department of chemistry, k. n. toosi university of technology, p.o. box. 15875-4416, tehran, iran.

the structure and the electronic properties of single-walled zigzag bn and b3c2n3 nanotubes (n, 0; n=4–10) were investigated using first-principles calculations based on a density functional theory. a plane–wave basis set with periodic boundary conditions in conjunction with vanderbilt ultrasoft pseudo-potential was employed. the energy gap of zb3c2n3nts was calculated and compared with the cor...

رشیدی, آرزو, روشن انتظار, صمد,

In this paper, the phase properties of waves reflected from one-dimensional double-periodic quasi-crystals consisting of single-negative materials are investigated using transfer matrix method. It is observed that, by increasing the double-periodic generation number, a large omnidirectional band gap is created in the single-nagative frequency range. We limit our studies to the frequency range o...

The research in the short-chain organic -conjugated molecules has become one of the most interesting topics in the fields of chemistry. These compounds have become the most promising materials for the optoelectronic device technology. The use of low band gap materials is a viable method for better harvesting of the solar spectrum and increasing its efficiency. The control of the band gap of th...

2012
N. D. Drummond

We report calculations of the electronic structure of silicene and the stability of its weakly buckled honeycomb lattice in an external electric field oriented perpendicular to the monolayer of Si atoms. The electric field produces a tunable band gap in the Dirac-type electronic spectrum, the gap being suppressed by a factor of about eight by the high polarizability of the system. At low electr...

Journal: :Physical chemistry chemical physics : PCCP 2014
Pin Xiao Xiao-Li Fan Li-Min Liu Woon-Ming Lau

The promising photovoltaic activity of pyrite (FeS2) is attributed to its excellent optical absorptivity and earth abundance, but its band gap, 0.95 eV, is slightly lower than the optimum value of 1.3 eV. Here we report the first investigation of strained FeS2, whose band gap can be increased by ∼0.3 eV. The influence of uniaxial and biaxial strains on the atomic structure as well as the electr...

Journal: :Physical Review A 2011

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