In this paper we report a study on the small signal characterization and simulation of Single Halo (SH) thin film Silicon-on-Insulators (SOI) nMOSFETs for analog and mixed signal applications. The single halo structure has a high pocket impurity concentration near the source end of the channel and low impurity concentration in the rest of the channel. Besides excellent DC output characteristics...

An analytical model is presented of the 3-D subthreshold electrostatics of low-doped nanoscale squaregate MOSFETs operating in the subthreshold domain. The model is based on a solution of the 3-D Laplace equation utilizing the four-fold symmetry of the cross sections perpendicular to the channel axis and assuming parabolic potential distributions in the directions perpendicular to the gates for...

Selective emitters have been an important research subject for crystalline silicon solar cells for decades. It is being used in production for high efficiency solar cells. In this study, selective diffusion barriers have been used to produce selective emitters. This method allows easy control of the lightly doped areas. Experimentally, selectivity has been confirmed and lightly doped sheet resi...

We show how a lightly doped Mott insulator has hugely enhanced electronic thermal transport at low temperature. It displays universal behavior independent of the interaction strength when the carriers can be treated as nondegenerate fermions and a nonuniversal "crossover" region where the Lorenz number grows to large values, while still maintaining a large thermoelectric figure of merit. The el...

We show how a lightly doped Mott insulator has hugely enhanced electronic thermal transport at low temperature. It displays universal behavior independent of the interaction strength when the carriers can be treated as nondegenerate fermions and a nonuniversal “crossover” region where the Lorenz number grows to large values, while still maintaining a large thermoelectric figure-of-merit. The el...

A magnetic field parallel to an electrical current does not produce a Lorentz force on the charge carriers. Therefore, orbital longitudinal magnetoresistance is unexpected. Here we report observation of large and non saturating in lightly doped SrTiO$_{3-x}$ independent relative orientation field. We show that this quasi-isotropic can be explained if carrier mobility along all orientations smoo...

2014 In this paper, the experimental results describing the substrate bias effect on the Schottky gate capacitance-voltage and the DC current-voltage characteristics of GaAs FET’s (N-type epilayer on semi-insulating Cr-doped substrate) are reported. These results are accounted for by the formation of a double space-charge in the N-layer and in the S.I. substrate in the vicinity of the interface...

An increase in the density of states between the oxygen 2p bands and the Fermi level is seen with increasing Gd concentrations. In addition, for the Gd-doped HfO2 films, the Gd 4f photoexcitation peak at 5.5 eV below the valence band maximum was identified using resonant photoemission. Electrical measurements show pronounced rectification properties for lightly-doped Gd:HfO2 films on p-Si and f...