Given a gate set S universal for quantum computing, the problem of decomposing a unitary operator U into a circuit over S is known as the synthesis problem. This problem can be solved exactly, if U belongs to the set of circuits generated by S. Otherwise, it can be solved approximately, by finding a circuit U ′ such that ||U ′ −U || < for some chosen precision > 0. The synthesis problem is impo...

Determining the optimal implementation of a quantum gate is critical for designing a quantum computer. We consider the crucial task of efficiently decomposing a general single-qubit quantum gate into a sequence of fault-tolerant quantum operations. For a given single-qubit circuit, we construct an optimal gate sequence consisting of fault-tolerant Hadamard (H) and π/8 rotations (T ). Our scheme...

application of quantum-dot is a promising technology for implementing digital systems at nano-scale.  quantum-dot cellular automata (qca) is a system with low power consumption and a potentially high density and regularity. also, qca supports the new devices with nanotechnology architecture. this technique works based on electron interactions inside quantum-dots leading to emergence of quantum ...

A one-dimensional pure stress initial boundary value problem of linear elastodynamics for amicroperiodic layered semi-space in which amicrostructural length is taken into account is revisited. Also, the plane stress harmonic waves propagating in a microperiodic layered infinite elastic space are discussed. It is shown that (i) for a particular system of the length and time units the transient s...

Two-dimensional layered semiconductors present a promising material platform for band-to-band-tunneling devices given their homogeneous band edge steepness due to their atomically flat thickness. Here, we experimentally demonstrate interlayer band-to-band tunneling in vertical MoS2/WSe2 van der Waals (vdW) heterostructures using a dual-gate device architecture. The electric potential and carrie...

We report ab initio calculations of the spin splitting of the uppermost valence band (UVB) and the lowermost conduction band (LCB) in bulk and atomically thin GaS, GaSe, GaTe, and InSe. These layered monochalcogenides appear in four major polytypes depending on the stacking order, except for the monoclinic GaTe. Bulk and few-layer ε-and γ -type, and odd-number β-type GaS, GaSe, and InSe crystal...

A probing technique to obtain the energy distribution of positive charges in high-k gate stack dielectrics, both within and beyond the substrate bandgap, has been proposed. The energy distribution of different high-k devices has been investigated and attention has been paid to their differences from the single-layered SiON devices. The results obtained from the technique demonstrate the existen...

In this study, we investigated chemically exfoliated two-dimensional (2-D) nanoflakes of molybdenum disulfide (MoS2) as charge-storing elements for use in organic multilevel memory devices (of the printed/flexible non-volatile type) based on organic field-effect transistors (OFETs) containing poly(3-hexylthiophene) (P3HT). The metallic MoS2 nanoflakes were exfoliated in 2-methoxyethanol by the ...