Calculations of the recoil energy under bombardment surface edge (001) for vanadium mono-crystal by K + ions (E_0=10-50 eV) with initial motion trajectories lying in planes perpendicular to plane and parallel (100) (110), passing along crystallographic directions [010] [110], respectively, have been made method molecular dynamics using a long-range interaction potential. Anisotropy maximum tran...

Previously, in situ bombardment of massive ions (Ar, Kr, etc.) was considered to be necessary for the formation of c-BN films. Because of the accumulated stress, bombardment of massive ions has led to the formation of c-BN films with poor adhesion. Here we show that c-BN films can be grown without involving bombardment of massive ions. This is achieved by using plasma-assisted pulsed-laser depo...

Low temperature plasma assisted nit riding treatments of 316 stainless steel produce a complex layer constituted by tow different metastable f.c.c. solid solution denoted ( γ N1 and γ N2 ). About the formation of these double layers, different hypothesis was proposed in the literature. For verifying these hypotheses, the effects of differentes conditions such as nit riding temperature, cleaning...

Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region ~220–250 °C!...

0009-2614/$ see front matter 2011 Elsevier B.V. A doi:10.1016/j.cplett.2011.03.003 ⇑ Corresponding author. Fax: +1 814 863 8403. E-mail addresses: bjg@chem.psu.edu, bjg@psu.edu The simplicity of interpreting depth profiling in SIMS experiments is often limited by sample damage and surface roughness that accompany the ion bombardment process. Molecular dynamics simulations are implemented to obt...

A sodium pump inhibitor has been isolated from human plasma and extensively purified. This material, endogenous digitalislike factor, was examined by a variety of mass spectrometric techniques. A low-resolution fast atom bombardment mass spectrometric analysis of a sample of purified endogenous digitalislike factor revealed a single unique molecular ion in the mass range 100-2,500. The accurate...

Molecular dynamics computer simulations have been employed to model the bombardment of Ag{111} covered with three layers of C6H6 by 15 keV Ga and C60 projectiles. The study is aimed toward examining the mechanism by which molecules are desorbed from surfaces by energetic cluster ion beams and toward elucidating the differences between cluster bombardment and atom bombardment. The results show t...

A mechanism is described by which interface electronic properties can affect bulk semiconductor behavior. In particular, experimental measurements by photoreflectance of Si(100)-SiO2 interfaces show how a controllable degree of band bending can be introduced near the interface by ion bombardment and annealing. The resulting electric field near the interface can affect dopant concentration profi...

Growth manipulation methods, which have been successfully used to improve the growth of homoepitaxial films, are applied to molecular beam epitaxy of the heteroepitaxial system Ni/Cu~111!. The procedures applied are temperature reduction during nucleation and pulsed ion bombardment during deposition. While the first does not lead to smoother films, the ion beam assisted growth is successful in ...

Ion beam milling has become a widespread specimen preparation technique for non-biological materials over the last two decades, particularly for cross-sectional and plan-view transmission electron microscope (TEM) specimens. The basic principle of ion milling involves bombarding a specimen with energetic ions or neutral atoms acclerated and formed into a tightly focused ion beam. Material is sp...