A GaAs integrating optical receiver has been designed and realized using a commercial foundry process. The receiver was then transplanted by epitaxial lift off (ELO) onto an InP substrate. This technology allows the monolithical integration of previously incompatible materials onto one chip. To our knowledge the chip described is the most complex chip that has been transplanted by ELO. The inte...

WSi, thin films deposited on InP substrates have been investigated for possible use as refractory ohmic contact materials for self-aligned laser devices. The films have been rf diode sputtered using various Ar gas pressures from a single commercial target composed of W and Si with an atomic ratio of 1:l. Following the deposition, the WSiJInP samples were rapid thermal processed using a rapid th...

Remote plasma metalorganic chemical vapor deposition (RP-MOCVD) technique, though relatively new, is becoming more and more important in the processing of the 111-V semiconductor materials and, specifically, of indium phosphide. So far different processes have been designed for (a) the cleaning of InP substrates to remove surface native oxide by reduction with H2 plasnla and (b) the InP deposit...

A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black I...

Ice nucleating particles (INP) active at a few degrees below 0°C are produced by a range of organisms and released into the environment. They may affect cloud properties and precipitation when becoming airborne. So far, our knowledge about sources of biological INP is based on grab samples of vegetation, soil or water studied in the laboratory. By combining measurements of INP concentrations in...

It is technologically important to understand how halogens react with semiconductor surfaces because halogen compounds are commonly used to etch semiconductor wafers in the microelectronics industry. Halogens are also model adsorbates for studying chemisorption on covalently bonded materials, such as semiconductors, owing to the simple nature of the bonds that they form. The growing use of III-...

The morphologies and microstructures of kinked InP nanowires (NWs) prepared by solid-source chemical vapor deposition method were examined using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Statistical analysis and structural characterization reveal that four different kinds of kinks are dominant in the grown InP NWs with a bending angle of ap...

Research activity: Materials science of magnetic and ferroelectric oxides, semiconductor nanostructures, optoelectronic device design, and characterization of monolithically-integrated GaNand InP-based optoelectronic devices. Primary research interest is in the field of far-IR Ellipsometry, Transmission, and Raman Spectroscopy, Nanoscale High-Angular Resolution X-ray Diffraction, X-ray Standing...

Almost ever since the advent of the microelectronics adventure, silicon-based MOSFET (metal–oxide–semiconductor fieldeffect transistor) technology has been largely dominant. However, for a few years now this technology has exhibited some fundamental limitations in tackling the increasingly challenging issues of miniaturization and improvements in processing speed and power consumption. Hence, n...

Colloidal quantum dots (QDs) exhibit highly desirable sizeand shapedependent properties for applications from electronic devices to imaging. Indium phosphide QDs have emerged as a primary candidate to more toxic CdSe QDs, but production of InP QDs with the desired properties lags behind other QD materials due to a poor understanding of how to tune the growth process. Using high-temperature ab i...