Indium Phosphide QuantumDots (InP QDs) have emerged as an alternative to toxic metal ion based QDs in nanobiotechnology. The ability to generate cationic surface charge, without compromising stability and biocompatibility, is essential in realizing the full potential of InP QDs in biological applications. We have addressed this challenge by developing a place exchange protocol for the preparati...

Indium Phosphide Quantum Dots (InP QDs) have emerged as an alternative to toxic metal ion based QDs in nanobiotechnology. The ability to generate cationic surface charge, without compromising stability and biocompatibility, is essential in realizing the full potential of InP QDs in biological applications. We have addressed this challenge by developing a place exchange protocol for the preparat...

N. Dobigeon*, Y. Altmann, N. Brun and S. Moussaoui University of Toulouse, IRIT/INP-ENSEEIHT, 31071 Toulouse Cedex 7, France School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh, EH14 4AS, United Kingdom Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Univ. Paris-Saclay, 91405 Orsay Cedex, France Ecole Centrale de Nantes, IRCCyN, UMR CNRS 6597, N...

Two ee colliders, VEPP-4M and VEPP2000, are taking data at the Budker INP in Novosibirsk, Russia. KEDR detector at the VEPP-4M collider continues deliver precision measurements of the charmonium family. Results of the ψ(2S ) and ψ(3770) study are presented. Two energy scans of a center-of-mass energy range from 1 GeV to 2 GeV has been performed by the VEPP2000 collider with an integrated lumino...

Nine quaternary (Al,Ga,In)–(P,As,Sb) semiconductor compounds lattice matched to InP are investigated theoretically. Direct bandgap, refractive index at 1.55 μm wavelength, and thermal conductivity are calculated as a function of the composition. These material properties are important, e.g. in distributed Bragg reflectors of vertical-cavity lasers. The alloy systems AlGaAsSb, AlGaPSb and GaInPS...

Peak gain wavelength tuning via the gain-lever effect is demonstrated in segmented contact InP quantum dot Fabry–Perot lasers. A tuning range of 6.5 ± 0.1 nm was recorded in the lasing spectra of a 1.9 mm long broad area device operating at 22°C. The authors clarify the nature of the tuning mechanism and identify the critical material and device parameters that determine the limits of the wavel...

in this paper, we examine the effect of the energy difference between the l- and the -valleys in compound semiconductor materials, carrier effective mass, and the scattering processes on the electron transport characteristics in mesfets. to do this, we use the monte carlo simulation to demonstrate the superiority of the ingaas mesfet, made on a semi-insulating inp substrate, over both inp and ...

Compact integrated microring resonators are promising candidates for various applications in optical signal processing and communication such as optical filters, wavelength (de)multiplexers, single mode sources, dispersion compensators and wavelength converters. Active GaInAsP/InP material is particularly suited for the fabrication of "lossless" filter devices as well as novel laser components ...

A self-conststent quantum mechanical simulation is used to study the effects of doping, spacer layers, harrier height, harrier wdth and well doping on the bound state and bound state charge in a deep quantum well resonant tunneling structure. Experimental reaulta for the GaAs and InP heteroatructure material system are presented. Finally various device applications. such as microwaw video detec...

This paper presents a comprehensive comparison of three state-of-the-art heterojunction bipolar transistors (HBTs); the AlGaAs/GaAs HBT, the Si/SiGe HBT and the InGaAs/InP HBT. Our aim in this paper is to find the potentials and limitations of these devices and analyze them under common Figure of Merit (FOM) definitions as well as to make a meaningful comparison which is necessary for a technol...