Thin films of indium doped zinc sulfide (ZnS) for different indium (In) concentrations (x=0.0 - 0.8) were deposited onto glass substrate by spray pyrolysis method at 523K temperature. Aqueous solution of zinc acetate, indium chloride and thiorea were used to deposit the In-Zn-S film. The deposited thin films were characterized by Energy dispersive X-ray (EDX), Scanning electron microscopy (SEM)...

The reaction between 1,3,5-tris(4-hydroxyphenyl)benzene and benzene-1,3,5-tricarbonyl trichloride leads to polyester condensation and formation of a novel COF on an Au(111) surface. The characterization performed in situ by means of variable temperature STM and XPS reveals the formation of an array of hexagonal cavities with ca. 2 nm size.

Catalytic waves obtained from the perchloric acid-soluble fraction of serum in the presence of hexaminecobalt trichloride appear to conform to a Langmuir adsorption isotherm. Wave heights for sera from patients with untreated urological cancers significantly exceed those from normal subjects. In general, treatment with diethylstilbestrol decreased the wave height. Effects of some other chemothe...

The fluxless solderability of pure indium on gold-coated surfaces is investigated in this study using measurements of wetting angle and joint strength. This study focuses on the effects of indium s native oxides and those which form during heat treatment. The initial oxide thicknesses are obtained by heating indium samples at various temperatures, and then, during the reflow above the melting t...

Recycling of the semiconductor material copper indium gallium diselenide (CIGS) is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. As a continuation of our previous work, where we recycled high purity selenium from CIGS waste materials, we now show that copper and indium can be recycled by electrodeposition from hydrochloric...

Articles you may be interested in A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination Instability of amorphous hafnium-indium-zinc-oxide thin film transistors under negative-bias-illumination stress Appl. Investigation of zinc interstitial ions as the origin of anomalo...

an additional, slightly delayed onset of gastro-intestinal disturbance including abdominal pain and persistent anorexia. Urine antimony estimations revealed a concentration in excess of i mg./litre in these five men. Environmental measurements suggest that they were briefly exposed to air containing up to 146 mg. hydrochloric acid and 73 mg. antimony per m.3 expressed as the metal. These findin...