نتایج جستجو برای: high field effect
تعداد نتایج: 4014594 فیلتر نتایج به سال:
Monolayer Tungsten Diselenide (WSe2) exhibits tremendous advantages as a channel material for next-generation field-effecttransistors (FETs). This paper reviews the relevant physics and properties of WSe2 and highlights the excellent scalability of monolayer WSe2 for ultra-short channel (sub-5 nm) FETs. The crucial role of metal-WSe2 contacts in determining the performance of monolayer WSe2 FET...
In this work, the operation of n- and p-type field-effect transistors (FETs) on the same WSe2 flake is realized,and a complementary logic inverter is demonstrated. The p-FET is fabricated by contacting WSe2 with a high work function metal, Pt, which facilities hole injection at the source contact. The n-FET is realized by utilizing selective surface charge transfer doping with potassium to form...
Epitaxial multilayers, consisting of a PrBa2Cu307_ x buffer layer, ultrathin YBa2Cu307_ x and SrTiO 3, have been grown for application in electric field effect devices. Different analytical techniques indicate a sharp interface between the layers and good dielectric properties of the SrTiO3-1ayer. First measurements show clear modification of the superconductor's current-voltage characteristics...
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