To achieve high performance Ge nMOSFETs it is necessary to reduce the metal/semiconductor Schottky barrier heights at the source and drain. Ni/Ge and NiGe/Ge Schottky barriers are fabricated by electrodeposition using n-type Ge substrates. Current (I)–voltage (V) and capacitance (C)–voltage (V) and low temperature I–V measurements are presented. A high-quality Schottky barrier with extremely lo...

In this paper, the effects of horizontal stress and dimensions of barrier pillars on the stability of drifts hr been investigated. An elastoplastic hybrid finite/boundary element program has been used. A plastic analysis of stresses in barrier pillars above the drifts in one of the underground coal mines with inclined seams is examined. Computed stresses and safety factor controur lines around ...

has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...

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This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT) with a 1702 V breakdown voltage (BV) and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN/GaN superlattice buffer layers. Relative to the carbon-doped GaN spacer layer, we grew the AlGaN back barrier layer at a high temperature, resulti...

A barrier option is an option whose payoff depends on whether the price path of the underlying asset ever reaches certain predetermined price levels called the barriers. A single(double-) barrier option is a barrier option with one (two, respectively) barrier(s). No simple and exact closed-form pricing formula for double-barrier options has been reported in the literature. This paper proposes a...

The possible application of Schottky diodes as detector elements in receivers and image sensing systems operating in the THz frequency range has been demonstrated in the literature. In addition to metal-semiconductor (M-S) Schottky diodes, the use of heterojunction Schottky barrier diodes for detection and mixing applications has also been explored. Such diodes require lower d.c. bias voltages,...

The consequences of zinc oxide (ZnO), Aluminum oxide ( 3 2O Al ) and Titanium oxide (TiO2) on tree growth have been comprehensively investigated in this paper. Zinc oxide (ZnO), II-VI compound semiconductor, is used in varistors in power insulation life. Due to its excellent electrical properties such as nonlinearity of current-voltage (I-V) characteristics, high fast-transient response and hig...