نتایج جستجو برای: heterojunction bipolar transistor lasers hbtls
تعداد نتایج: 84759 فیلتر نتایج به سال:
As application of re-activation of backside on power device Insulated Gate Bipolar Transistor (IGBT), laser annealing was employed to irradiate amorphous silicon substrate, and resistivities were measured using four point probe measurement. For annealing the amorphous silicon two lasers were used at wavelength of visible green (532 nm) together with Infrared (793 nm). While the green laser effi...
Two standard commercial flashlamp-pumped Nd:YAG (YAG denotes yttrium aluminum garnet) lasers have been upgraded to "pulse-burst" capability. Each laser produces a burst of up to 15 2 J Q-switched pulses (1064 nm) at repetition rates of 1-12.5 kHz. Variable pulse-width drive (0.15-0.39 ms) of the flashlamps is accomplished by insulated gate bipolar transistor (IGBT) switching of electrolytic cap...
به دلیل نیاز تراشه ها به اتصالات نوری ترانزیستور لیزر با قابلیت ارسال سیگنال نوری والکتریکی به طور همزمان در سال های اخیر بسیار مورد توجه قرار گرفتهاست به این دلیل در این پروژه سعی شده است ابتدا روند پیدایش ترانزیستور لیزر بیان شد ساختار تکنولوژی ساخت و پارامترهای کاری از اعم از نوری والکتریکی برای یک ترازیستور لیزر یا طول های کاواک 150 و 400 مورد بررسی قرار می گیرد. سپس چگونگی توید نور در بیس ...
The bipolarlFET characteristics of the ZDEG-HBT (TwoDimensional Electron Gas Base p-n-p AIGaAs/GaAs Heterojunction Bipolar Transistor) are analyzed extensively by a two-dimensional numerical simulator based on a drift-diffusion model. For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f r is determined mainly by the collector transit time of ho...
A two-stage 920–960 MHz power amplifier (PA) in GaAs heterojunction bipolar transistor (HBT) process is demonstrated for small-cell communications the lunar environment. To cope with temperature fluctuations during days, a novel complementary to absolute (CTAT) biasing scheme proposed PA achieve an ultra-wide-range compensation. Moreover, meet linearity requirements of applications while produc...
A personal communications service/wide-band code division multiple access (PCS/W-CDMA) dual-band monolithic microwave integrated circuit (MMIC) power amplifier with a single-chip MMIC and a single-path output matching network is demonstrated by adopting a newly proposed on-chip linearizer. The linearizer is composed of the base–emitter diode of an active bias transistor and a capacitor to provi...
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