A two-stage 920–960 MHz power amplifier (PA) in GaAs heterojunction bipolar transistor (HBT) process is demonstrated for small-cell communications the lunar environment. To cope with temperature fluctuations during days, a novel complementary to absolute (CTAT) biasing scheme proposed PA achieve an ultra-wide-range compensation. Moreover, meet linearity requirements of applications while produc...

A personal communications service/wide-band code division multiple access (PCS/W-CDMA) dual-band monolithic microwave integrated circuit (MMIC) power amplifier with a single-chip MMIC and a single-path output matching network is demonstrated by adopting a newly proposed on-chip linearizer. The linearizer is composed of the base–emitter diode of an active bias transistor and a capacitor to provi...

A method is described for measuring the bandgap narrowing in the base of a Si homojunction or SiISiGe heterojunction bipolar transistor from the temperature dependence of the collector current. The model includes the temperature dependence of the intrinsic carrier concentration, the bandgap, the minority carrier mobility, and freeze-out of dopant in the base. The analysis method is applied to t...

A new insight on the behavior of metal contact-insulating interfaces in SiGe heterojunction bipolar transistor is given by high-performance aberration-corrected scanning transmission electron microscopy (STEM) analysis tools equipped with sub-nanometric probe size. It is demonstrated that the presence of initial defects introduced during technological processes play a major role in the accelera...