Polytetrafluoroethylene (PTFE) is provided with excellent self-lubricating properties and corrosion resistance. However, the lower thermal resistance greatly limits its high-temperature applications. In present work, two types of fillers rigid organic polymers submicron-sized inorganic hexagonal boron nitride (h-BN) were added to PTFE matrix. The microstructure thermal–mechanical PTFE-based com...

The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN) through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured...

Hexagonal boron nitride (h-BN) is a promising material as a dielectric layer or substrate for two-dimensional electronic devices. In this work, we report the synthesis of large-area h-BN film using atmospheric pressure chemical vapor deposition on a copper foil, followed by Cu etching and transfer to a target substrate. The growth rate of h-BN film at a constant temperature is strongly affected...

The contact strength, adhesion and friction, between graphene and an incommensurate crystalline substrate such as h-BN depends on their relative alignment angle θ. The well-established Novaco-McTague (NM) theory predicts for a monolayer graphene on a hard bulk h-BN crystal face a small spontaneous misalignment, here θNM ≃ 0.45 degrees which if realized would be relevant to a host of electronic ...

Hexagonal boron nitride (h-BN) is known as an effective additive to improve the hydrogen de/absorption properties of hydrogen storage materials consisting of light elements. Herein, we report the unique hydrogen desorption properties of LiAlH4/h-BN composites, which were prepared by ball-milling. The desorption profiles of the composite indicated the decrease of melting temperature of LiAlH4, t...

The interfaces between monolayer boron carbonitrides and hexagonal boron nitride (h-BN) play an important role in their practical applications. Herein, we respectively investigate the structural and electronic properties of two metal-free heterobilayers constructed by vertically stacking two-dimensional (2D) spintronic materials (B4CN3 and B3CN4) on a h-BN monolayer from the viewpoints of latti...