Numerical methods are proposed for an advanced Poisson-Nernst-Planck-Fermi (PNPF) model for studying ion transport through biological ion channels. PNPF contains many more correlations than most models and simulations of channels, because it includes water and calculates dielectric properties consistently as outputs. This model accounts for the steric effect of ions and water molecules with dif...

The Drift Diffusion equations constitute the simplest and most commonly used model for simulating semiconductor devices. This paper contains a comparitive study of the performance and stability of several algorithms that solve these coupled equations without decoupling them. The considered techniques include Successive Over-Relaxation schemes, Nonlinear Conjugate Gradients, and Damped Inexact N...

The way from the compact model development to implementation into a commercial circuit simulator is often time consuming. Moreover, it is not always straightforward how to implement behavior models in SPICE-like simulators. In this paper, a capability of the analog hardware description language (AHDL) Verilog-A to handle state-of-the-art compact bipolar transistor modeling mixed with behavioral...

For the iirst time, we show a departure from the conventional dependence of fi on base thickness xs in abrupt junction n-p-n heterojunction bipolar transistors (HBTs). This is to be contrasted with the familiar fl a l/xi found in homojunction bipolar transistors where current gain is limited by diffusive base transport. Our data, combined with high frequency and collector breakdown measurements...

A physics-based large-signal model including thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects that are important for the operation of Si/SiGe HBTs and is directly related to the parameters in the fabrication process. Using extraction procedures for only a few parameters that inherently are difficult to predict, either due to uncertainties in t...

This paper describes SCORPIO, a new one-dimensional, drift-diffusion simulator for modeling silicon-germanium heterojunction bipolar transistors (SiGe HBT's) over a wide temperature range (77400K). SCORPIO will be used to investigate fundamental low-temperature device physics problems and key device design issues. Comparisons of simulation results with experimental measurements are being used t...