Complementary fully-depleted Ge interband-tunneling field-effect transistors (TFETs) and static inverters are modeled to quantify TFET performance relative to Si MOSFETs. SYNOPSYS TCAD is used to compute the two-dimensional electrostatics and determine the tunnel junction electric field. This electric field is used in an analytic expression to compute the tunnel current. The speed and power per...

We have applied extended X-ray absorption fine structure (EXAFS) analyses and ab initio molecular dynamics (AIMD) simulations to study the structure of Ag-doped (up to 42%) Ge1Sb2Te4 alloys. The computer models are consistent with EXAFS experiments, and reveal that the Ge environment is significantly modified by Ag doping, whereas those of Sb and Te are barely affected (except for high Ag conce...

Ge doping in AlGaN was studied over a wide dopant concentration range. For high concentrations, the formation of VIII–nGeIII determined to be main point defect limiting conductivity. It shown that complex could suppressed by controlling chemical potentials during growth, leading higher maximum achievable carrier and selective stabilization certain type. Chemical potential growth species varied ...

PROPERTIES AND DEVICE APPLICATIONS OF SILICON AND SILICON-GERMANIUM NANOSTRUCTURES WITH DIFFERENT DIMENSIONS by Han-Yun Chang Defect-free crystalline Si/SiGe(Ge) nanostructures are demonstrated despite the 4% lattice mismatch between Si and Ge. The lattice mismatch-induced strain is sufficiently relaxed through the designed, cluster morphology, or nanowire (NW) structures. Future device applica...