We have proposed that the gap junctions between amphibian blastomeres are comprised of voltage-sensitive channels. The kinetic properties of the junctional conductance are here studied under voltage clamp. When the transjunctional voltage is stepped to a new voltage of the same polarity, the junctional conductance changes as a single exponential to a steady-state level. The time constant of the...

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal-insulator-semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated alumini...

Thin film transistor circuits using organic semiconductors (oTFT) have received intense interest for applications requiring structural flexibility, large area coverage, low temperature processing, and low-cost [1]. Pentacene TFTs have demonstrated the highest performance among TFTs with an organic semiconductor channel. A major limitation, however, has been unusually high operating voltages (20...

An area efficient technique for tuning floatinggate circuits is described. The effective threshold voltage seen from a control gate can be programmed to virtually any value. The floating-gate transistor (FGMOS) may be used to implement low-power/low-voltage digital -and/or analog circuits.

The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowire transistor on low doped p-type silicon-on-insulator wafer. The etching process was developed a...

We demonstrate experimentally that a hybrid single-electron transistor with superconducting leads and a normal-metal island can be refrigerated by an alternating voltage applied to the gate electrode. The simultaneous measurement of the dc current induced by the rf gate through the device at a small bias voltage serves as an in situ thermometer.

The minimum supply voltage in low-voltage circuits can be defined as Vsup,min = 2(Vgs+Vsat) [1]. Low-voltage circuits are able to operate on a supply voltage of two stacked gate-source voltages and two saturation voltages. Differential amplifiers are biased with a transistor feeding a differential pair, where the current level is set by the bias transistor. The minimum input voltage in a NMOS i...

A voltage reference is an essential building block of many analog and digital circuits. The performance of a reference is gauged by the maximum variation in its allowable operating conditions. One of the most important specifications of a reference is its temperature drift. Therefore, special attention should be paid by the designer to the thermal behavior of a voltage reference. In this thesis...

Hydrogen exposure of III-V HEMTs has been shown to cause a threshold voltage shift, AVT. This is a serious reliability concern. This effect has been attributed to a H-induced piezoelectric effect. Formation of TiHX expands the Ti layer in the gate, causing mechanical stress in the underlying semiconductor. This induces piezoelectric charge in the heterostructure underneath the gate that shifts ...