A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, GIT diode characteristic at the gate-source, and corresponding drive circuit is thus required. Several studies in literature have proposed circuits with speed-up capacitors, but adding these capacitors complicates circuit, increases both reverse conduction losses. Moreover, driving such becomes m...

This paper proposes a model to calculate statistical gate-delay variation caused by intra-chip and inter-chip variabilities. The variation of each gate delay directly influences the circuitdelay variation, so it is important to characterize each gate-delay variation accurately. Every transistor in a gate affects transient characteristics of the gate, so it is indispensable to consider an intrag...

A planar double gate quantum wire transistor (QWT) is proposed and demonstrated. The transistor uses a narrow wire gate placed inside the gap of a split gate to create a single one-dimensional ( 1D) quantum wire (QW) . We demonstrate theoretically and experimentally that the wire gate can create a QW potential with a better confinement and therefore larger subband separations than that in other...

We define an invariant of a multi-valued logic gate by considering the number of certain threshold functions associated with the gate. We call this invariant the continuous sensitivity of the gate. We discuss a method for analysing continuous sensitivity of a multi-valued logic gate by using experimental data about the gate. In particular, we will show that this invariant provides a lower bound...

Many information theoretically secure protocols are known for general secure multi-party computation, both in the honest majority setting, and in the dishonest majority setting with preprocessing. All known protocols that are efficient in the circuit size of the evaluated function follow the same typical “gate-by-gate” design pattern: we work our way through a boolean or arithmetic circuit, mai...

In this work we fabricate and characterize field-effect transistors based on the solution-processable semiconducting polymer poly(3-hexylthiophene) (P3HT). Applying two independent gate potentials to the electrolyte-gated organic field-effect transistor (EGOFET), by using a conventional SiO(2) layer as the back-gate dielectric and the electrolyte-gate as the top-gate, allows the measurement of ...

A sodium channel is composed of four similar domains, each containing a highly charged S4 helix that is driven outward (activates) in response to a depolarization. Functionally, the channel has two gates, called activation gate (a gate) and inactivation gate (I gate), both of which must be open for conduction to occur. The cytoplasmically located a gate opens after a depolarization has activate...