In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with...

Co-integration of gallium nitride (GaN) power devices with Si logic ICs makes a way applying high and efficiency circuits on single chip. In order to co-integrate...

Prominent deflections are shown to occur in freestanding silicon nitride thin membranes when exposed to a 50 keV gallium focused ion beam for ion doses between 10(14) and 10(17) ions/cm(2). Atomic force microscope topographs were used to quantify elevations on the irradiated side and corresponding depressions of comparable magnitude on the back side, thus indicating that what at first appeared ...

The Gallium Nitride (GaN) Light-Emitting-Diode (LED) bottom refection grating simulation and results are presented. A microstructure GaN bottom grating, either conical holes or cylindrical holes, was calculated and compared with the non-grating (flat) case. A time monitor was also placed just above the top of the LED to measure both time and power output from the top of the LED. Many different ...

This paper discusses the background, applications, and proposed characterization of Gallium Nitride (GaN) based hybrid MOS-HEMTs for high-voltage power switching. The basic material properties, device structure, and basics of operation are discussed in section II. Section III touches on the relevance and motivation behind this research and some simple examples of where GaN based MOS-HEMTs would...

Self-heating is a severe problem for high-power gallium nitride (GaN) electronic and optoelectronic devices. Various thermal management solutions, for example, flip-chip bonding or composite substrates, have been attempted. However, temperature rise due to dissipated heat still limits applications of the nitride-based technology. Here we show that thermal management of GaN transistors can be su...