The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III-V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent r...

Renewable energy demand is increasing as fossil fuels are limited and pollute the environment. The solar absorber an efficient renewable source that converts radiation into heat energy. We have proposed a gallium arsenide-backed design made with metamaterial resonator SiO2 substrate. investigated thin wire I-shaped designs. I-shape outperforms gives 96% average absorption peak of 99.95%. Struct...

This work presents the design, fabrication, and measured results of a fully integrated miniature rectenna using novel tunnel diode known as Asymmetrical Spacer Layer Tunnel (ASPAT). The term is an abbreviation for rectifying antenna, device with rectifier antenna coexisting single design. ASPAT centrepiece used its strong temperature independence, zero bias, high dynamic range. designed to be i...

MESFET are used in circuitsof gigahertz frequencies as they based on gallium arsenide (GaAs) having electron mobility six times higher than that of silicon. An analytical model simulating different device current-voltage characteristics, i.e., output conductance and transconductance a 0.3μm gate with temperature dependence is proposed. The validated by comparing the results proposed those numer...

Three-inch (100) gallium arsenide wafers were bonded to (1102) sapphire in a micro-cleanroom at room temperature under hydrophilic or hydrophobic surface conditions. Subsequent heating up to 500 ◦C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close to the fracture energy of the bulk material. The bond energy was measured as a function of the temperature. Since the thermal ...

Toxic metals Gallium (Ga) and Arsenic (As) are widely found in our environment. Humans are exposed to these metals from numerous sources, including contaminated air, water, soil and food. Exposure to these semiconductors mostly occurs in microelectronic industry where the intermetallic compound Gallium Arsenide (GaAs) is frequently used during the preparation of material, cleaning and maintenan...

Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, photoluminescence. Second, we ...

The selective area, metalorganic vapor-phase epitaxy of gallium arsenide on silicon substrates was investigated. Low-temperature arsenic passivation of the silicon surface was realized at 650 1C. A two-step growth method was used to deposit the GaAs films with an optimum nucleation temperature of 400 1C. Layers nucleated at 350 1C or below were found to be polycrystalline whereas those nucleate...

Gallium arsenide (GaAs) is a semiconductor utilized in the electronics industry. Chemical exposure of animals causes a local inflammatory reaction, but systemic immunosuppression. Mice were administered i.p. 200 mg/kg GaAs crystals or latex beads, or vehicle. Five days after exposure, splenic macrophages were defective, whereas thioglycolate-elicited peritoneal macrophages (PEC) were more effic...

We demonstrate a silicon (Si)-gallium arsenide (GaAs) semiconductor-based holographic metasurface antenna operating at 94 GHz. The molds the radiated beam by resorting to approach involving modulation of guided-mode generated pillbox beamformer. beamformer is fed three integrated horns in substrate-integrated waveguide (SIW) technology located focal plane parabolic reflector correspond independ...