Venugopal, Ramesh. Ph.D., Purdue University, August, 2003. Modeling Quantum Transport in Nanoscale Transistors. Major Professor: Mark Lundstrom. As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale t...

In the present work, density functional theory (DFT) combined with non-equilibrium Green’s function (NEGF) formalism is performed. The electronic properties (band structure and density of states) and transport properties (transmission spectrum and I–V characteristics) of armchair silicene nanoribbons (ASiNRs) doped with various elements, such as Al, Ga, In, Tl, P, As, Sb and Bi, are investigate...

A non-equilibrium Green function formalism (NEGF) is used to study the conductance of a side-gated quantum point contact (QPC) in the presence of lateral spin-orbit coupling (LSOC). A small difference of bias voltage between the two side gates (SGs) leads to an inversion asymmetry in the LSOC between the opposite edges of the channel. In single electron modeling of transport, this triggers a sp...

During the last 20 years since the first Quantum Cascade Laser (QCL) [1] there has been substantial development. The long-wavelength limit exploiting intersubband transitions below the reststrahlenband with frequencies in the terahertz range [2] is currently an area of active research but efforts are also being made in the opposite direction towards the short-wavelength limit. As the lasing is ...

The use of γ-graphyne-1 nanotubes (GyNTs) in tunneling field effect transistors (TFETs) suppresses ambipolarity and enhances the subthreshold swing (\(\mathrm{SS}\)) TFETs, due to large energy band gap high electron effective mass GyNTs. In this research, analysis structural, electronic thermoelectric properties family under deformation potential (DP) approach reveals that electron–phonon mean ...

In this article, we study the coupled mode space approach to nonequilibrium Green’s function NEGF simulation. When the lateral confinement of nanoscale devices changes abruptly and the correlation functions arising from coupled mode effects are improperly evaluated in the current and charge density calculations, it becomes difficult to solve nonequilibrium Green’s function equations self-consis...

In this paper, we have carried out a numerical simulation of FinFETs. The model is based on 1D non-equilibrium Green’s function (NEGF) along the channel and 2-D Schrödinger equation in the confined cross section and provides insights into the performance of FinFETs with ultra small channel cross section. The simulation results of FinFETs show normal I-V characteristics with great potential in s...

Most common implementations of the NEGF approach are done using the Finite-Difference Method (FDM) on uniform grids. This discretization scheme allows one to study many types of planar devices, such as MOSFETs, superlattices and planar heterojunctions. Within this paradigm, carrier scattering can be included through the selfenergy approach, almost always under the assumption of local interactio...

By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...