As we approach the single molecule scale, we are fast approaching the the limits of miniaturizing information. The star of silicon microelectronics has been the field effect transistor (FET) which acts as a voltage-controlled current switch, and a bit is represented by the on/off states of a pair of n-channel and p-channel FETs. However, porting FETs to the molecular scale has its limitations. ...

Field effect transistor (FET) biosensors are capable of detecting various biomolecules, although challenges remain in the detection uncharged molecules. In this study, cortisol was demonstrated by interfacial design using a technique to immobilize target-bound aptamers. The aptamers, which formed higher-order structure than target-unbound expanded distance between adjacent aptamers and reduced ...

We have developed a surface potential based compact model for the single-walled semiconductor CNT field effect transistor (CNT-FET) shown in Figure 1. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are shown in Figures 2-5 respectively. The model comparison is done using the numerical results of [1-4]. The compact model is developed for ...

A method to functionalize single-walled carbon nanotubes (SWNTs) in a field-effect transistor (FET) device for the selective detection of heavy-metal ions is presented. In this method, peptide-modified polymers were electrochemically deposited onto SWNTs and the selective detection of metal ions was demonstrated by choosing appropriate peptide sequences. The signal transduction mechanism of the...

We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of ph...

Silicon nanochannel field effect transistor (FET) biosensors are one of the most promising technologies in the development of highly sensitive and label-free analyte detection for cancer diagnostics. With their exceptional electrical properties and small dimensions, silicon nanochannels are ideally suited for extraordinarily high sensitivity. In fact, the high surface-to-volume ratios of these ...

Recently, Molybdenum Disulphide (MoS2) promising candidate for low-power digital appli to monolayer (1L) MoS2, few-layer MoS2 (FL-M due to its higher density of states (DOS). Howeve study of FL-MoS2 field-effect-transistor (FET) paper, we report a high-performance FL-MoS2 FE contact resistance (~0.8 kΩ.μm) that is close to t silicon contacts in CMOS technology. A cor performance and the number ...

The Hamiltonian size reduction method or the mode space applicable to general heterogeneous structures is developed in this work. effectiveness and accuracy of are demonstrated for four example devices GaSb/InAs tunnel field effect transistor (FET), MoTe2/SnS2 bilayer vertical FET, InAs nanowire FET with a defect, Si rough surfaces. reduced around 5 % original full without losing calculated tra...

Tobacco mosaic virus (TMV) has been employed as a robust functional template for the fabrication of a TMV/zinc oxide field effect transistor (FET). A microwave based approach, under mild conditions was employed to synthesize stable zinc oxide (ZnO) nanoparticles, employing a molecular precursor. Insightful studies of the decomposition of the precursor were done using NMR spectroscopy and materi...

In this paper we describe the tunneling junction model effect on silicon nanowire gate-allaround field effect transistor using CMOS 45 nm technology. Tunneling effects provides better subthreshold slope, excellent drain induced barrier lowering and superior ION-IOFF ratio.This paper demonstrates the gate controlled tunneling at source of Gate-all-around field effect transistor. Low leakage curr...