Semiconductor devices with shallow junctions can be fabricated using plasma immersion ion implantation. In this technique BF3 gas has been used as the boron dopant source due to its low toxicity. Not only are ions implanted but, because of the fluorine ions, there is etching and deposition at the wafer surface. Therefore, the relationship between total dose and processing time is not straightfo...

Aqueous NaOH with ethanol (strong) etchant is widely used. It shortens etching time effectively compared to normal conditions (6.25N at 70 °C). Two equations have been proposed calculate the molarity and volume. Another two empirical were introduced for estimating bulk etch rates of PADC etched in strong etchant. Up now, there no such available literature that can predict V b volumes. The funda...

Plasma etching process plays a critical role in semiconductor manufacturing. Because physical and chemical mechanisms involved in plasma etching are extremely complicated, models supporting process control are difficult to construct. This paper uses a 35-run D-optimal design to efficiently collect data under well planned conditions for important controllable variables such as power, pressure, e...

We report on the electrode-selective deposition and etching of hydrogenated silicon thin films using a plasma enhanced chemical vapour deposition process excited by sawtooth-shaped tailored voltage waveforms (TVWs). The slope asymmetry of such waveforms leads to a different rate of sheath expansion and contraction at each electrode, and therefore different electron power absorption near each el...

Solid State Nuclear Track Detectors (SSNTDs) are well known for the detection of ionizing radiation through track formation of heavy ionizing particles. The LR-115 detector is a commonly used SSNTD for the detection and measurement of Rn and its progeny. Several techniques of track revelation are known but, the chemical etching technique is the most frequently used in which tracks can be made v...

The effect of radio frequency ~rf! bias frequency on SiO2 feature etching using inductively coupled fluorocarbon plasmas is investigated. It is found that the rf bias frequency can have an important effect on SiO2 feature etch rate, microtrenching phenomena, and SiO2-to-photoresist etch selectivity. In addition, the effect of rf bias pulsing on inductively coupled fluorocarbon plasma SiO2 etchi...

Closed end ~10, 10! single walled carbon nanotubes ~SWNTs! have been opened by oxidation at their ends and at wall defect sites, using ozone. Oxidation with ozone, followed by heating to 973 K to liberate CO and CO2, causes etching of the nanotube surface at carbon atom vacancy defect sites. The rate of adsorption of Xe has been carefully measured as a function of the degree of nanotube etching...

Etching of copper films by chlorine is induced by a scanning cw laser that locally heats the tllm. In experimental regimes with relatively high laser power, low chlorine pressure and fast scan speed, laser etching of copper is well characterized by a kinetic model based on the calculated temperature rise. In other regimes, a thick nondesorbed copper chloride layer forms on top of the etched cop...

Plasma etching to As2S3 thin films for optical waveguide fabrication has been studied using a helicon plasma etcher. The etching effects using the processing gases or gas mixtures of O2, Ar, and CF4 were compared. It was found that the O2 plasma had no chemical etching effect to the As2S3, but it could oxidize the surface of the As2S3. The Ar plasma provided a strong ion sputtering effect to th...