The dynamic scaling of the island-size distribution in submonolayer epitaxial growth and its dependence on the critical island size i is studied using a realistic model of epitaxial growth for i ­ 0, 1, 2, and 3. An analytic expression for the scaled island-size distribution as a function of i is also proposed. Our results agree well with experiments on FeyFe(100) deposition and on FeyCu(100) d...

Kongetira, Poonacha. MSEE., Purdue University, August 1994. Modelling of Selective Epitaxial Growth(SEG) and Epitaxial Lateral Overgrowth( ELO) of Silicon in SiH2C12-HC1-H2 system. Major Professor: Gerold W. Neudeck. A semi-empirical model for the growth rate of selective epitaxial silicon(SEG) in the Dichlorosilane-HC1-Hz system that represents the experimenltal data has been presented. All ep...

In epitaxial growth on vicinal surfaces, elasticity effects give rise to step bunching instability and some self-organization phenomena, which are widely believed to be important in the fabrication of nanostructures. It is challenging to model and analyze these phenomena due to the nonlocal effects and interactions between different length scales. In this paper, we study a discrete model for ep...

The effects of short-range attraction in metal epitaxial growth are studied. Our results indicate that even at normal incidence, the short-range attraction of depositing atoms to step edges can significantly increase the selected mound angle and surface roughness for typical energies used in epitaxial growth. Our results also lead to a picture of the process of deposition near step edges that i...

InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The dislocations were trapped within a thin InAs epilayer. The obtained 90-nm-wide InAs nanofins with ...

We analyze the morphological stability against azimuthal, axial, and general helical perturbations for epitaxial core-shell nanowires in the growth regimes limited by either surface diffusion or evaporation-condensation surface kinetics. For both regimes, we find that geometric parameters (i.e., core radius and shell thickness) play a central role in determining whether the nanowire remains cyl...