نتایج جستجو برای: energy gap e
تعداد نتایج: 1765474 فیلتر نتایج به سال:
in this study, the adsorption of 4-hydroxy phenyl-azobenzene on the surface of (4, 0) zigzag open-end boron nitride nanotube (bnnt) has been investigated by quantum calculations. in order to find the preferred adsorption site, different positions and orientations were considered. the impacts of donor-acceptor electron delocalization on the structural and electronic properties and reactivity of ...
Novel method doped carbon with nanoparticle Cr2O3 and thin film has been studied in much thought in wavelength range, the doping can help new excellent physical and chemical properties for carbon, this application has a semiconductor feature. Nanocomposite thin film deposited on copper and glass substrates have been created by utilizing Spray Pyrolysis method. The prec...
It is shown that all polar encoding schemes of rate R > 1 2 of block length N implemented according to the Thompson VLSI model must take energy E ≥ Ω ( N ) . This lower bound is achievable up to polylogarithmic factors using a mesh network topology defined by Thompson and the encoding algorithm defined by Arikan. A general class of circuits that compute successive cancellation decoding adapted ...
LXeGRIT is a balloon-borne Compton telescope based on a liquid xenon time projection chamber (LXeTPC) for imaging cosmic γ–rays in the energy band of 0.2-20 MeV. The detector, with 400 cm 2 area and 7 cm drift gap, is filled with high purity LXe. Both ionization and scintillation light signals are detected to measure the energy deposits and the three spatial coordinates of individual γ–ray inte...
In this paper we present a theoretical study of the structure, energetics, potential energy surfaces, and energetic stability of excess electron bubbles in ((4)He)(N) (N=6500-10(6)) clusters. The subsystem of the helium atoms was treated by the density functional method. The density profile was specified by a void (i.e., an empty bubble) at the cluster center, a rising profile towards a constan...
In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...
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