Ultrascaled WS 2 field-effect transistors (FETs) fabricated on exfoliated multilayer channels with excellent ON-state and OFF-state performance are reported. Recorded high current ( I xmlns:xlink="http://www.w3.org/1999/xlink"> \scriptscriptstyle ON ) ultralow contact resistance R xmlns:xl...

Complementary metal-oxide-semiconductor (CMOS) device faces various unknown short channel effects (SCEs) such as subthreshold leakage and drain-induced barrier lowering (DIBL) in advanced technologies. This degrades the circuit’s performance, especially SRAM cell, owing to high demand for large density. Fin-shaped field-effect transistor (FinFET) is one of trending choices memory designers, whi...

We present self-consistent, non-equilibrium Green's function calculations of the characteristics of short channel carbon nanotube transistors, focusing on the regime of ballistic transport with ohmic contacts. We first establish that the band line-up at the contacts is renormalized by charge transfer, leading to Schottky contacts for small diameter nanotubes and ohmic contacts for large diamete...

In this paper we extend a compact surrounding-gate MOSFET model to include the hydrodynamic transport and quantum mechanical effects, and we show that it can reproduce the results of 3D numerical simulations using advanced transport models. A template device representative for the cylindrical surrounding-gate MOSFET was used to validate the model. The final compact model includes mobility degra...

In the present work, Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been studied for its improved linearity performance on the basis of VIP3 (i.e. extrapolated input voltage at which the first and third order harmonic voltages are equal) and compared with the conventional Single Material Gate (SMG) AlGaN/GaN HEMT. The influence of the device parameters such as t...

In this paper, electrical characteristics of nanoscale single-, double-, and all-around-gate silicon-0n-insulator (SOI) devices are computational investigated by using a quantum mechanical simulation. Considering several important properties, such as on/off current ratio, drain induced channel barrier height lowering, threshold voltage roll off, and subthreshold swing, geometry aspect ratio is ...

Analytical models for channel potential, threshold voltage, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results are verified against simulations and good agreements are observed. Analytical expressions for subthreshold swing, drain induced barrier lowering effect, and threshold voltage roll-off characteristics are pr...