We demonstrate gate control of the electronic g tensor in single and double quantum dots formed along a bend in a carbon nanotube. From the dependence of the single-dot excitation spectrum on magnetic field magnitude and direction, we extract spin-orbit coupling, valley coupling, and spin and orbital magnetic moments. Gate control of the g tensor is measured using the splitting of the Kondo pea...

Self-aligned four-terminal (4T) planar metal double-gate (DG) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature (LT), which is below 550◦C, to realize high performance and low power dissipation system-onglass (SoG). The top gate (TG) and bottom gate (BG) were formed from tungsten (W); the BG was embedded in the glass substra...

To manage the increasing static leakage in low power applications and reduced Ion/Ioff due to aggressive scaling of MOS transistors, Tunnel FET (TFET) devices are considered as the most promising candidates because of their excellent immunity against such important short channel effects. Solutions for leakage reduction as well as improving on current of the device are sought at the device desig...

A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin-orbit interaction. Here, we demonstrate the generation and tuning of electric field induced Rashba spin-orbit interaction in InAs nanowires where a strong electric field is created by either a double gate or a solid ele...

We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene fieldeffect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare th...

In this comment we demonstrate that the inclusion of field-induced quantum confinement effects through appropriate discretization of conduction and valence bands refutes the suitability of a germanium electron–hole bilayer tunnel field-effect transistor with symmetrically arranged gates (Jeong et al 2015 Semicond. Sci. Technol. 30 035021). Delayed alignment of the first electron and hole energy...

Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nanoscale. FinFETs are double-gate devices. The two gates of a FinFET can either be shorted for higher perfomance or independently controlled for lower leakage or reduced transistor count. This gives rise to a rich design space. This chapter provides an introduction to various interesting FinFET logic des...

Metallic gate electrodes are often employed to control the conductivity of graphene based field effect devices. The lack of transparency of such electrodes in many optical applications is a key limiting factor. We demonstrate a working concept of a double layer graphene field effect device that utilizes a thin film of sputtered aluminum nitride as dielectric gate material. For this system, we s...