This paper presents findings on applying physical models in the literature to describe silicon luminescence spectra at 80 – 300 K. Incorporation of exciton recombination models are shown to disagree with the measured luminescence spectra, whereas a free electron-hole recombination model is shown to match well with the luminescence spectra. However, the lack of consideration for excitons is not ...

Semiconductor devices have been scaled to the point that transport can be dominated by only a single dopant atom. As a result, in a Si fin-type field effect transistor Kondo physics can govern transport when one electron is bound to the single dopant. Orbital (valley) degrees of freedom, apart from the standard spin, strongly modify the Kondo effect in such systems. Owing to the small size and ...

We present the first realization of three-dimensional lithography on the nanometer scale using atom optical techniques. It has already been shown that, with atom lithography, two-dimensional lateral structures of 50 nm can be obtained. In our experiment we utilize the resonant enhancement of light forces to address specifically one species of a multi-component beam. Thus a host and a dopant mat...

We present the first experimental results of the studying of field electron emission from sharp silicon tips covered by thin dielectric CaF2 layers containing Sm dopant ions. Some indications on the resonant tunneling of electrons from sharp silicon tip through dopant samarium ions inside the coating have been observed, which can be regarded as an implementation of one-atom electron source of a...

Copper(II)-doped Pb[Zr0.54Ti0.46]O3 (PZT) ferroelectrics with a dopant concentration of 0.25 mol % were investigated at high magnetic fields, enabling an enhanced resolution of the structural distortion at the dopant site. The results obtained suggest that Cu2+ substitutes as an acceptor centre for [Zr,Ti]4+ in oxygen octahedra with tetragonal, monoclinic and rhombohedral distortion, confirming...

Nanocrystalline zinc oxides are produced by chemical vapor synthesis and characterized by x-ray diffraction, high resolution transmission electron microscopy, nitrogen sorption, and extended x-ray absorption fine structure. Dopant elements aluminum, gallium, and indium influence the particle size of the powders as well as lattice parameters and local structure. The different effects of the thre...

We present a two-dimensional simulation model for dopant diffusion in polysilicon, which includes dopant clustering in grain interiors as well as in grain boundaries. The grain growth model is coupled with the diffusion coefficient of the dopants and the process temperature. For all high dose implantation cases the trapping/emission mechanism in polysilicon and the grain growth are the major ef...

Medium energy ion scattering was used to study the distribution of ion-implanted Sb dopant in Si with excess vacancies and separation by implanted oxygen (SIMOX) substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under th...

The local structure of Mn-doped Li2B4O7(001) was investigated using extendedX-ray absorption fine structure (EXAFS) at the Mn K edge and electron paramagnetic resonance (EPR). The location of the Mn dopant in a lithium tetraborate crystal is consistent with occupation of a site with strong oxygen coordination. The Mn–O bond lengths are similar to those observed with Mn doping of the icosahedral...

We demonstrate a modulation of thermoelectric power factor via a radial dopant inhomogeneity in B-doped Si nanowires. These nanowires grown via vapor-liquid-solid (VLS) method were naturally composed of a heavily doped outer shell layer and a lightly doped inner core. The thermopower measurements for a single nanowire demonstrated that the power factor values were higher than those of homogeneo...