In recent years, the demand for thin film coatings on large area substrates has been rapidly increasing. Coating is some times required to make an object harder, or to provide the surface with particular electrical and optical properties. Hence, research on thin film science has received much attention due to its tremendous applications in modern technology. The importance of coatings and the s...

Various tools have been employed in studying and computing beam or field propagation in a medium with variation of small refractive index Feit and (Fleck,et al,1976)(Fleck,1978)( Ugwu et al,2007) some researchers had employed beam propagation method based on diagonalization of the Hermitian operator that generates the solution of the Helmholtz equation in media with real refractive indices (Thy...

Goniometric time-domain spectroscopy (GTDS), employing an ultrashort electromagnetic (EM) pulse technique, has been developed for measuring the dielectric constant of thin films in a broad band of gigahertz to terahertz. An ultrafast optoelectronic system, including an emitter and a detector unit, is constructed with a –2 goniometer. A silicon wafer was analyzed as the reference substrate mater...

The chemical structure and electrical properties of anodized titania are investigated for their application as conformal ultra-thin dielectrics on high surface area titanium electrodes. The chemical structure is studied by XPS depth profiling for the first time along with the role of anodization conditions on dielectric thickness, leakage current, and capacitance densities. Different leakage cu...

A high contrast electroluminescent (EL) device structure is presented. The diffuse luminous reflectivity from the metal/dielectric/phosphor/indium-tin-oxide/glass EL device structure is 3%. A Eu-doped GaN phosphor is used to demonstrate the contrast-enhanced operation. Low reflectivity is achieved by inserting a light-absorbing black thick-film BaTiO3 layer between the phosphor and the rear met...

Thin HfO2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate @Hf(NO3)4# . Properties of these films have been investigated using x-ray diffraction, x-ray reflectivity, spectroscopic ellipsometry, atomic force microscopy, x-ray photoelectron spectroscopy, and capacitance versus voltage measurements. Smooth and uniform initiation of film growth has be...

We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO2 with an optional polymer interface...