Nanoscopically confined polymer films are known to exhibit substantially depressed glass transition temperatures (Lg's) as compared to the corresponding bulk materials. We report here that pentacene thin films grown on polymer gate dielectrics at temperatures well below their bulk Tg's exhibit distinctive and abrupt morphological and microstructural transitions and thin-film transistor (TFT) pe...

Surface waves, named here as Dyakonov–Tamm waves, can exist at the planar interface of an isotropic dielectric material and a chiral sculptured thin film (STF). Due to the periodic nonhomogeneity of a chiral STF, the range of the refractive index of the isotropic material is smaller but the range of the propagation direction in the interface plane is much larger, in comparison to those for the ...

Lead zirconate titanate ~PZT! thin films with a Zr/Ti ratio of 52/48 were deposited on platinized silicon substrates by a sol-gel method and crystallized with preferred ~111! or ~100! orientation. Both the piezoelectric properties (d33) and the field-induced strains of the films with different thickness and preferred orientation were measured by a laser Doppler heterodyne interferometer. The we...

Conditions for the transfer printing of patterned carbon nanotube (CNT) films, along with a Au-gate, a poly methylmethacrylate (PMMA) dielectric layer and Au source-drain electrodes have been developed for the fabrication of thin-film transistors on a polyethylene terephthalate (PET) substrate. Chemical vapor deposition (CVD) grown CNTs were patterned using a photolithographic method. Transfer ...

In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs...

ing dielectric permittivity and loss tangent of embedded passive materials. The measurements are made in an APC-7 coaxial configuration where the test specimen represents a load terminating an air-filled coaxial transmission line. The method is suitable for testing high dielectric constant (high-k) polymer-composite materials having nominal thickness of 1 μm to 300 μm at frequencies of 100 MHz ...

Thin HfO2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate @Hf(NO3)4# . Properties of these films have been investigated using x-ray diffraction, x-ray reflectivity, spectroscopic ellipsometry, atomic force microscopy, x-ray photoelectron spectroscopy, and capacitance versus voltage measurements. Smooth and uniform initiation of film growth has be...

Electrical properties of three kinds of poly(methyl methacrylate) (PMMA) with different tacticity, i.e. isotactic(i), syndiotactic(s), and atatic(a), were investigated for the application in field effect transistor. Metal-insulator-silicon structures were fabricated via spin coating PMMA on heavily doped p-type silicon (p-Si) followed by evaporating gold electrode. The electrical characteristic...

The influence of processing parameters of aluminum oxide (Al2O3) and lanthanum oxide (La2O3) gate dielectric is investigated. Trimethylaluminum (TMA) and tris(isopropylcyclopentadienyl) lanthanum [La(iPrCp)3] were used as precursors separately, and H2O was used as oxidant. The ultra-thin La1 - x Al x O3 gate dielectric films are deposited on p-type silicon substrates by atom layer deposition (A...

The influence of the film thickness and the substrate’s refractive index on the surface mode 7 at the superstrate is an important study step that may help clearing some of the misunderstandings 8 surrounding their propagation mechanism. A single sub-wavelength slit perforating a thin metallic 9 film is among the simplest nanostructure capable of launching Surface Plasmon Polaritons on its 10 su...