Abstract—The origin of negative flat-band shift using La2O3 incorporation in HfO2 dielectrics has been extensively examined. From careful extraction of effective work function of gate electrode and fixed charges at each interface, it has been revealed that La2O3 at high-k/Si substrate or high-k/SiO2 interface has either large amount of positive fixed charges or an additional dipole of 0.36 V co...

In this paper, we study the circuit performance issues of high-K gate dielectric MOSFETs using the Look-up Table (LUT) approach. The LUT approach is implemented in a public-domain circuit simulator SEQUEL. We observed an excellent match between LUT simulator and mixed mode simulations using MEDICI. This work clearly demonstrates the predictive power of the new simulator, as it enables evaluatio...

Studies of Metal–insulator–metal (MIM) capacitors having high-κ La2O3\HfO2 dielectric stacks are fabricated using Pulse Laser Deposition (PLD) is carried out. Nano-sized La2O3\HfO2 dielectric stacks are deposited using PLD system under optimized pressure, substrate temperature and numbers of shots inside argon ambient chamber. The morphology of dielectric stacks is examined using AFM and the th...

The dielectric and conduction behavior of SrTiO3 thin films deposited on a SrTiO3 single-crystal substrate is studied. Without dc bias, an obvious dielectric ‘‘defect mode’’ in the dielectric loss is observed in the temperature range of ;100–200 K; however, no noticeable corresponding dielectric constant peak is observed. By applying a high dc bias ~>40 kV/cm!, a dielectric constant peak with f...

In recent years, the study of newer types of dielectric materials and compositions has been of great interest. The quest for new, innovative and easily obtainable dielectric materials that yield predictable and controllable permittivity and permeability values with very low dielectric loss has always been fruitful. New ideas and designs to implement these materials in microwave devices and stru...

Dielectric measurements were carried out on aqueous solution of poly(diallyldimethylammonium chloride) (PDADMAC) with different concentrations at room temperature. Additionally, for selected solutions the temperature dependence of dielectric relaxation spectroscopy (DRS) was examined in the range of 5-70 degrees C. The dielectric relaxation in the order of around MHz was observed, and the diele...

In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...

Transformers are one of the most valuable assets of power systems. Maintenance and condition assessment of transformers has become one of the concerns of researchers due to huge number of transformers has been approached to the end of their lifetimes. Transformer’s lifetime depends on the life of its insulation and the insulation’s life is strongly influenced by its moisture attraction as well....

Abstract – In this paper, the effect of applied electric field on the damage due to partial discharges activity into the surroundings dielectrics of a narrow channel encapsulated within the volume of a dielectric material is evaluated using a kinetic model based on Particle in Cell - Monte Carlo Collision (PIC-MCC) model. After application of an electric field across a dielectric material which...