The influence of diamond like carbon films properties on quantum efficiency of prepared transmission photocathodes has been investigated. DLC films were deposited on silicon substrate and stainless steel mesh by PECVD using methane, argon and hydrogen or deuterium gas mixtures. Photocathodes prepared with deuterated DLC film have higher quantum efficiency than photocathodes prepared with hydrog...

This work examines electron field-emission characteristics of polycrystalline diamond films at elevated temperatures. Diamond is an excellent material as a field emitter because of its exceptional mechanical hardness and chemical inertness. The motivation behind this study involves the use of field emitters in applications where high temperatures exist. Nitrogen-doped polycrystalline diamond fi...

The dc self bias voltage developed during CHJAr radio frequency plasma-enhanced vapor deposition of thin films containing polycrystalline diamond grains within an a:C matrix (carbon-diamond) is found to influence the optical and mechanical properties of the films. In particular it is shown that there is a simultaneous etch deposition process which takes place, and that the dc bias can be used t...

Charge transfer between diamond and an electrochemical redox couple in an adsorbed water film has recently been shown to pin the Fermi level in hydrogen-terminated diamond. Here we show that this effect is a more general phenomenon and influences the properties of other semiconductors when the band lineup between the ambient and electronic states in the semiconductor is appropriate. We find tha...

The effect of boundary layer thickness on diamond film formation in an atmospheric pressure plasma was investigated by adding argon to the methane-hydrogen reactant jet so as to increase the jet momentum. It was found that argon addition significantly increased the range of conditions over which well-faceted, continuous diamond film could be grown. A numerical model was developed to predict the...

Anirudha V. Sumant, Orlando Auciello, Robert W. Carpick, Sudarsan Srinivasan, and James E. Butler of smooth diamond films with uniform thickness and micro/nanostructure over large area substrates (≥150 mm diameter wafer), as recently demonstrated.1 Growth of thin (0.1 to 5 micron thick) diamond films on nondiamond substrates, typically conventional electronic substrates such as Si, SiC, and AlN...

Nitrogen doped diamond-like carbon thin films with or without platinum and ruthenium incorporation (N-DLC or PtRuN-DLC) were deposited on highly conductive p-Si substrates by DC magnetron sputtering to study the effect of Pt and Ru doping on the voltammetric performance of the N-DLC films. The potential windows of these film electrodes were measured in different electrolytic solutions, such as ...

In this paper the performance of radiographic film (KODAK X-Omat V) for analysing intensity-modulated (IM) beams in a plane at reference depth (5 cm for 6 MV, 10 cm for 18 MV) was investigated. The field size dependence of the film response was studied for small and medium field sizes. The dose rate dependence of the response and possible effects of fractionating the dose were assessed. In the ...

The indentation of a brittle film on a ductile substrate is analysed for obtaining the interface toughness. This measurement method of adhesion provides a simple technique for sampling a small area of the interface on practical geometries with common laboratory equipment. Mechanics solutions are presented to access the interface toughness, Fc, from measurements of the applied load, delamination...

Abstract We report polycrystalline diamond epitaxial growth on ? -Ga 2 O 3 for device-level thermal management. focused establishing conditions accompanying the study of various nucleation strategies. A window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration , a conductivity 110 ± 33 W m ?1 K and diamond/ boundary resistance 30...