ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50-800 mTorr. XRD characterization showed that for a window of working pressures between 300-500 mTorr, the deposited films were polycrystalline,...

The 200-nm thick TiN films used in this work were grown on c-sapphire substrates (GT Crystal Systems, LLC, USA) using DC reactive magnetron sputtering. The deposition was performed in Ar-N2 atmosphere with a pressure of 5mTorr and gas flow rates of Ar and N2 being 4 and 6 sccm, respectively. During the deposition, the substrates were maintained at 800oC and the deposition rate was kept at appro...

The local coercivity distribution of CoCrPt alloy films prepared by dc magnetron sputtering has been investigated by means of magneto-optical microscope magnetometer, capable of simultaneously measuring the local magnetic properties on a submicrometer spatial resolution. We find that with increasing Pt concentration the local coercivity distribution becomes asymmetric and the average local coer...

Nitrogen doped diamond-like carbon thin films with or without platinum and ruthenium incorporation (N-DLC or PtRuN-DLC) were deposited on highly conductive p-Si substrates by DC magnetron sputtering to study the effect of Pt and Ru doping on the voltammetric performance of the N-DLC films. The potential windows of these film electrodes were measured in different electrolytic solutions, such as ...

Al2O3 is commonly used as host material for Er-doped integrated optical amplifiers. In this paper, a Graeco-Latin square is used in DC reactive magnetron sputtering deposition experiment in order to get low optical losses Al2O3 layer. By reasonable selection and careful arrangement of experimental parameters, an optimal combination of deposition parameters is obtained via statistic analysis wit...

Electrical properties, current transport mechanism, and stress induced leakage current (SILC) effect of Al2O3 gate dielectric thin films deposited by reactive dc magnetron sputtering were studied. The results show that annealing in O2 ambient can effectively reduce the oxygen vacancy in Al2O3 films but may not result in additional interfacial layer form at Al2O3/Si interface. In the fresh devic...

Fe-Pd alloy films, prepared by using a DC magnetron sputtering method, were developed as a high sensitive actuator, which was driven by the magnetic field. Fe-Pd alloy film shows large magnetostriction and high magnetostrictive susceptibility under 1 kOe. To evaluate the moving potential as magneto-driving actuator, the magnetostrictive properties were measured under different tensile loading s...

In2O3-x thin films with a thickness of 100-990 nm were grown by dc magnetron sputtering. Their structural, electrical and ozone sensing properties were analyzed. Structural investigations carried out by electron probe micro analysis, secondary ion mass spectrometry and atomic force microscopy showed a strong correlation between stoichiometry, surface topology and gas sensitivity. Moreover, the ...

We demonstrate high-performance nanowire superconducting single photon detectors (SSPDs) on bN thin films grown at a temperature compatible with monolithic integration. NbN films ranging from 150 nm to 3 nm in thickness were deposited by dc magnetron sputtering on MgO substrates at 400 degrees C SSPDs were fabricated on high quality NbN films of different thickness (7 to 3 nm) deposited under o...

Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by DC magnetron sputtering technique at different power variation. The X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) study revealed the formation of the AlN phase. The optical characteristics of films, such as refractiveindex, extinction coefficient, and average thickness, were calcu...