Accurate analog models of power system components are required in order to realize an analog computation engine for power systems. Analog computation is an area of continued interest. Among the advantages over traditional digital methods are physically realizable solutions and faster computation times. This paper focuses on the design, simulation, and hardware verification of a static transmiss...

ELECT A new method that compensates for the low DC gain of nanometre operational amplifiers (opamps) used for high-speed continuous-time (CT) ΣΔ modulators is described. The proposed solution compensates for the integrator’s phase error which is a main limitation produced by the low opamp’s gain. The method uses a simple auxiliary gain stage and a resistor. Simulations of a second-order CT ΣΔ m...

Al2O3 is commonly used as host material for Er-doped integrated optical amplifiers. In this paper, a Graeco-Latin square is used in DC reactive magnetron sputtering deposition experiment in order to get low optical losses Al2O3 layer. By reasonable selection and careful arrangement of experimental parameters, an optimal combination of deposition parameters is obtained via statistic analysis wit...

This paper presents a four-stage CMOS distributed amplifier (DA) design implemented in standard 0.18 μm CMOS technology. The proposed design eliminates the need for transmission line capacitors and, consequently, uses significantly smaller spiral inductors compared with the previous designs. Using the minimum size inductor, the bandwidth of the amplifiers is extended, and the quality factors of...

A physics-based multicell electrothermal equivalent circuit model is described that is applied to the large-signal microwave characterization of AlGaAs/GaAs HBT’s. This highly efficient model, which incorporates a new multifinger electrothermal model, has been used to perform dc, small-signal and loadpull characterization, and investigate parameter-spreads due to fabrication process variations....

In a never-ending effort to reduce power consumption and gate oxide thickness, the integrated circuit industry is constantly developing smaller power supplies. Furthermore, in an effort to reduce costs and integrate analog and digital circuits onto a single chip, MOS devices are used in the weak inversion region or the subthreshold inversion region to minimize dc source power. A feasible config...

Present status and perspective of GaN-based technology in Japan have been presented. An AlGaN/GaN HEMT is expanding its application field from L to W bands and it will replace the Si and GaAs based power amplifiers used in mobile phone base stations, terrestrial/satellite microwave communication systems, and collision avoidance car radar systems. A GaN-based rectifier diode will be used in AC/D...

We present the results of measurements of the scattering parameters of microstrip amplifiers MSAs based on the dc superconducting quantum interference device. The amplifier input impedance is poorly matched to typical transmission line impedances, resulting in high input return loss around 2 dB. We show that negative feedback can lower the MSA input impedance to achieve a robust match to 50 . I...

A CMOS class AB current mirror whose supply requirements are restricted to one threshold voltage plus three saturation voltages is presented. The circuit uses two poly resistors and two auxiliary differential amplifiers to achieve low-voltage operation, as well as control of quiescent currents and input bias voltage. A design example is implemented in a 0.5-μm standard technology and uses a 1-V...