نتایج جستجو برای: cobalt doped zno thin film
تعداد نتایج: 273084 فیلتر نتایج به سال:
Resistance switching random access memory (RRAM) has drawn considerable attention for the application in nonvolatile memory element in semiconductor memory devices. A ZnO thin film now assumed to be useful for dynamic random access memory (DRAM) cell. In this paper we provide a framework to its use as a switching ON or OFF in DRAM cell. In this type of memory cell the ZnO thin film has a lot of...
Spintronics aims at developing a new generation of electronic materials for consumer products based on electron spin rather than on electron charge. Its main objective is the fabrication of new devices based on semiconductor materials with magnetic behavior (so called diluted magnetic semiconductors). These devices combine the manipulation of electrons as classically known in semiconductor devi...
・ Abstract – Characteristics of Zinc oxide (ZnO) piezoelectric thin films have been investigated for thin film bulk acoustic wave (BAW) resonators with relationship to bottom electrodes. A Metal/ZnO/Metal/SiO2 membrane structure, which has secondary harmonics, was adopted for the BAW resonators. The ZnO thin films, showed clear c-axis orientation, were made by rf sputtering on bottom electrodes...
Five percent of Fe-doped ZnO (ZnO:Fe) thin films were deposited on Pt/TiO2/SiO2/Si substrates by a spin-coating method. The films were annealed without (ZnO:Fe-0T) and with a pulsed magnetic field of 4 T (ZnO:Fe-4TP) to investigate the magnetic annealing effect on the resistance switching (RS) behavior of the Pt/ZnO:Fe/Pt structures. Compared with the ZnO:Fe-0T film, the ZnO:Fe-4TP film showed ...
Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and sensor performance of ZnO films were investigated. Using AFM, SEM, XRD and WDS, the O2/Ar ratios during sputtering and Al dopant were found to control the property of ZnO films...
ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO: (Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermor...
ZnO and Cu doped[1] (CZO) thin films were prepared by radio frequency sputtering. The structural and optical properties of thin films were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), optical spectrophotometer, and photoluminescence (PL) techniques. ZnO thin films showed crystalline and micro-stress defects in the crystal lattice. Annealing of CZO thin films increa...
Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1...
We present a comprehensive study on Ti-doped ZnO thin films using X-ray Absorption Fine Structure (XAFS) spectroscopy. Ti K edge XAFS spectra were measured to study the electronic and chemical properties of Ti ions in the thin films grown under different ambient atmospheres. A strong dependence of Ti speciation, composition, and local structures upon the ambient conditions was observed. The XAF...
The hypothesis that high-Curie-temperature ferromagnetism in cobalt-doped ZnO (Co2+: ZnO) is mediated by charge carriers was tested by controlled introduction and removal of the shallow donor interstitial zinc. Using oriented epitaxial Co2+: ZnO films grown by chemical vapor deposition, kinetics measurements demonstrate a direct correlation between the oxidative quenching of ferromagnetism and ...
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