Large-area, vertically aligned silicon nanowires with a uniform diameter along the height direction were fabricated by combining in situ-formed anodic aluminum oxide template and metal-assisted chemical etching. The etching rate of the Si catalyzed using a thick Au mesh is much faster than that catalyzed using a thin one, which is suggested to be induced by the charge transport process. The thi...

Glass micromachining is a basic technology to achieve microfluidic networks for lab-on-a-chip applications. Among several methods to microstructure glass, the simplest and most widely applied is wet chemical etching (WE). However, accurate control of the reaction conditions to perform reproducible, fast and safe glass etching is not straightforward. Herein, microwave-assisted WE is demonstrated...

The authors report a new, important phenomenon: photo-assisted etching of p-type Si in chlorinecontaining plasmas. This mechanism was discovered in mostly Ar plasmas with a few percent added Cl2, but was found to be even more important in pure Cl2 plasmas. Nearly monoenergetic ion energy distributions (IEDs) were obtained by applying a synchronous dc bias on a “boundary electrode” during the af...

this research is aimed to undertake a comparative study on stability and thermal degradation kinetics of un-irradiated and high energy protons irradiated polyvinyl butyral (pvb) based on weight loss analysis and non-isothermal approaches. the weight loss by the un-irradiated pvb upon heating was found to be in two stages but due to high energy protons accelerated exposure following by chemical ...

Several silicon dioxide chemical vapor deposition processes using high density plasma sources have been recently proposed in the literature [4,6] for deposition of self-planarizing inter-level dielectric deposition. All these processes exhibit the competitive effect of simultaneous deposition and etching mechanisms. In previous papers [1,2,3], a level set approach was developed for etching and ...

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed by immersing the Pt coated samples into an etching solution containing sodium persulphate and hy...

Plasma etching to As2S3 thin films for optical waveguide fabrication has been studied using a helicon plasma etcher. The etching effects using the processing gases or gas mixtures of O2, Ar, and CF4 were compared. It was found that the O2 plasma had no chemical etching effect to the As2S3, but it could oxidize the surface of the As2S3. The Ar plasma provided a strong ion sputtering effect to th...

We report a controllable nanoscale diffusion-limited chemical etching for detaching aligned polystyrene nanocones from 3D taper-nanopore alumina templates, which can be recycled.