We examine the possibility that gauge field configurations on stacks of parallel Dp-branes support topological solitons. We give an exhaustive list of possible soliton charges for p ≤ 6. We also discuss how configurations carrying the soliton charges can be constructed from intersecting branes.

By placing theories with Yangian charges on the lattice in the analogue of the St Petersburg school’s approach to the sine-Gordon system, we exhibit the Yangian structure of the auxiliary algebra, and explain how the two Yangians are related.

A broad series of homochiral perylene bisimide (PBI) dyes were synthesized that are appended with amino acids and cationic side chains at the imide positions. Self-assembly behavior of these ionic PBIs has been studied in aqueous media by UV/Vis spectroscopy, revealing formation of excitonically coupled H-type aggregates. The interactions of these ionic PBIs with different ds-DNA and ds-RNA hav...

We study the classical radiation emitted by free-falling charges in de Sitter spacetime coupled to different kinds of fields. Specifically we consider the cases of the electromagnetic field, linearized gravity and scalar fields with arbitrary mass and curvature coupling. Given an arbitrary set of such charges, there is a generic result for sufficiently late times which corresponds to each charg...

Electro hydro dynamic (EHD) and electrostatic propulsion devices were developed in the 1920s by Thomas Townsend Brown. One such device, called a “lifter”, has no moving parts and, in the air, operates on electrical energy. It is a fashionable device and has a very simple structure, basically consisting of a narrow wire electrode and a large, flat one. However, it has a low ratio of propulsion f...

The aim of the proposed paper is an analytical model and realization characteristics for tunnel field-effect transistor (TFET) based on charge plasma (CP). One most applications TFET device which operates CP technique biosensor. CP-TFET to be used as effective detect uncharged molecules bio-sample solution. Charge one some techniques that recently invited induce carriers inside devices. In this...

1. Abstract We have studied the statistical variability (SV) in thinbody silicon-on-insulator (TBSOI) MOSFETs with high-κ/metal gate stacks. We have considered the impact of the gate workfunction variation (WFV) in conjunction with random discrete dopants (RDD) and trapped interface charges. The simulations were carried with the Glasgow 3D ’atomistic’ simulator GARAND. Results for both threshol...

The article reports the extraction of DC characteristics and small signal parameters Non-uniform Si TFET with dual material source (NUTFET-DMS) at different frequencies followed by its reliability investigation. device is examined analysing: (1) impact presence interface trap charges, (2) temperature variation (200- 400 K). In analysis it has been observed that in case absence charges increase ...