We report results of dissipative particle dynamics simulations and develop a semi-analytical theory of an anisotropic flow in a parallel-plate channel with two superhydrophobic striped walls. Our approach is valid for any local slip at the gas sectors and an arbitrary distance between the plates, ranging from a thick to a thin channel. It allows us to optimize area fractions, slip lengths, chan...

SiON/Ta2O5 stacked gate dielectric exhibits 3-5 orders smaller leakage current than SiO2 at 1.8nm, while the transistor characteristics such as mobility, Id-Vg, and Id-Vd, are similar to those of SiO2 transistor. N-channel MOSFET with equivalent SiO2 thickness down to 1.8nm (1.4nm equivalent due to elimination of poly-Si depletion) is demonstrated. Process effects are also studied for optimum p...

Abstract In this study, AlGaN/GaN high-electron-mobility transistor (HEMTs) with 65- and 38-nm channel layers back-barrier were fabricated. The isolation process resulted in damage related to the thickness of layer, which deteriorated properties such as sheet resistance Rsh transconductance gm. These attributed surface oxidation AlGaN barrier, simulation results showed that dependence on trap l...

In this paper, variability analysis of a graded-channel dual-material (GCDM) double-gate (DG) strained-silicon (s-Si) MOSFET with fixed charges is analyzed using Sentaurus TCAD. By varying the different device parameters, proposed GCDM-DG s-Si respect to variations in threshold voltage, drain current, and short-channel effects as line edge roughness fluctuations random dopant, contact resistanc...

The effect of gate length and Thickness on the characteristic curve of drain-source current verse gate voltage in ZnO and GaAs MOSFETs have been simulated. Three transistors with gate lengths of 30, 40 and 50 nm are simulated. Simulations show that with a fixed channel length, when the gate length is increases, the output drain current would be increased, the Moreover, with increasing oxide Thi...

When a film bulk acoustic resonator (FBAR) is coupled to a liquid layer with thickness comparable to the acoustic wavelength, the factor varies in a damped oscillatory pattern with the liquid thickness. This letter reports an analytical modeling and experimental demonstration of this behavior by integrating microfluidic channels to MEMS-based FBARs. It is found that assumes its maxima and minim...

We report, for the first time, a silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) which has a recessed p-buffer layer into the channel region near the source and a recessed channel into the p-buffer layer region near the drain under the gate. The length and thickness of the channel recess into the p-buffer layer are larger than the pbuffer recess into the channel...

Microfluidics imposes different requirements on 3D printing compared to many applications because the critical features for microfluidics consist of internal microvoids. Resins for general 3D printing applications, however, are not necessarily formulated to meet the requirements of microfluidics and minimize the size of fabricated voids. In this paper we use an optical approach to guide custom ...

abstract: the equal channel angular rolling (ecar) is one of the severe plastic deformation processes, which can develop a shear deformation into a sheet metal. in this process, internal stresses are created due to the different strain levels experienced in different locations at the same time. the incremental hole drilling method is an effective technique for the evaluation of the through-thic...

Based on CFD and film theory, filtration’s two-dimensional model of the hollow membrane was established by integrating mass transformation hydrodynamic transportation. Parameters concentration polarization in channel (i.e., solute concentration, factors, layer thickness) were estimated under different hydraulic conditions. In addition, algorithm for thickness has been improved. The results show...