نتایج جستجو برای: carrier relaxation time
تعداد نتایج: 2005455 فیلتر نتایج به سال:
Different size InGaN/GaN based micro-LEDs (μLEDs) are fabricated. An extremely high injection level above 16 kA/cm2 is achieved for 10 μm-diameter LED. The lateral current density and carrier distributions of the μLEDs are simulated by APSYS software. Streak camera time resolved photoluminescence (TRPL) results show clear evidence that the band-gap renormalization (BGR) effect is weakened by st...
Silicon is an ideal material for spintronic applications [1] due to long spin lifetime, however, considerable spin relaxation in gated silicon structures was experimentally observed [2]. Surface roughness scattering determines the transport in the channel at high carrier concentration in thin silicon films [3]. Here we investigate the spin relaxation due to surface roughness. The surface roughn...
Nanoposts of 10–40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography and inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral pe...
conclusion in breast cancer after nac, the lesion t2 relaxation time was reduced in the responders, and this finding is potentially useful to assess the response to nac. results in 26 cases with nac, the mean lesion t2 relaxation time before nac was 81.34 ± 13.68 ms, compared with 64.50 ± 8.71 ms after nac. significant differences in the lesion t2 relaxation times existed between the pre- and p...
Graphene is considered as a promising material in spintronics due to its long spin relaxation time and length. However, transport properties have been studied at low carrier density only, beyond which much still unknown. In this study, we explore the precession multilayer graphene high using ionic liquid gating. We find that directly proportional momentum time, indicating Elliott-Yafet mechanis...
Electron−phonon coupling controls nonradiative relaxation dynamics of the photoexcited electron−hole pair in semiconductor nanostructures. Here the optoelectronic properties for Aland P-codoped silicon quantum dots (QDs) are calculated by combining time-dependent density matrix methodology and ab initio electronic structure methods. The energy-band landscape of the codoped Si QD is elucidated v...
In this work we calculate the thermoelectric figure of merit XHfPb (X= Ni, Pd, and Pt) by computing both power factor lattice thermal conductivity first principles. We make reasonable approximations: use Constant Relaxation Time Approximation (CRTA) to compute electron transport contribution modified Debye–Callaway model conductivity. also report dielectric properties these semiconductors mode ...
We report a transient absorption microscopy study of charge carrier dynamics in bulk MoS 2 crystals at room temperature. Charge carriers are injected by interband absorption of a 555-nm pulse, and probed by measuring differential reflection of a time-delayed and spatially scanned 660-nm pulse. We find an intervalley transfer time of about 0.35 ps, an energy relaxation time of hot carriers on th...
We have developed a femtosecond time-resolved luminescence spectroscopy by the optical Kerr-gate ~OKG! method to investigate ultrafast carrier dynamics and relaxation processes of materials. Solid glasses with a high nonlinear refractive index were used as the Kerr media to obtain a subpicosecond time resolution. When a quartz plate was used as the Kerr medium, the Kerr efficiency and the instr...
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