نتایج جستجو برای: carrier properties

تعداد نتایج: 933214  

Journal: :Optics express 2015
Nezih T Yardimci Rodolfo Salas Erica M Krivoy Hari P Nair Seth R Bank Mona Jarrahi

We present a comprehensive analysis of terahertz radiation from large area plasmonic photoconductive emitters in relation with characteristics of device substrate. Specifically, we investigate the radiation properties of large area plasmonic photoconductive emitters fabricated on GaAs substrates that exhibit short carrier lifetimes through low-temperature substrate growth and through epitaxiall...

Journal: :international journal of nanoscience and nanotechnology(ijnn 0
a. ghozatloo faculty member of research institute of petroleum industry (ripi), west blvd. azadi sport complex, p.o. box: 14665-137, tehran, iran m. shariaty niassar transport phenomena & nanotech. lab (tpnt), school of engineering, university of tehran, p.o. box: 11155-4563, tehran, iran a. rashidi faculty member of research institute of petroleum industry (ripi), west blvd. azadi sport complex, p.o. box: 14665-137, tehran, iran

in this research, graphene was synthesized by chemical vapor deposition (cvd) method in atmosphere pressure (14.7 psi). different functionalization method was used for oxidizing of graphene such as acid and alkaline treatments. the functionalized graphene (fg) was characterized by ftir and raman spectroscopy. nanofluid with water and different concentration (0.05, 0.15 and 0.25 wt %) of fg were...

2005
Jianwu Dang Jianguo Wei Takeharu Suzuki Pascal Perrier

Coarticulation is an important phenomenon of speech production, which involves in both the physical level concerned with articulators’ properties, and the planning stage for generating motor commands. The authors have proposed a model for coarticulation, named “carrier model”, to imitate the coarticulation mechanism. The carrier model is built on an assumption that articulation can be separated...

2005
B. Jalali O. Boyraz D. Dimitropoulos V. Raghunathan

Scaling properties of two photon absorption, free carrier scattering, Raman scattering and Kerr effect in silicon waveguides is reported. It is shown that the dependence of minority carrier lifetime on waveguide dimensions has a profound impact on the performance of nonlinear optical devices built using silicon waveguides.

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