The biggest challenges faced in big cities are greenhouse gas emission and growing energy needs. Efficient utilization of existing infrastructures has a prominent role in response to the challenges. Energy hub approach embraces performance of different energy networks. Energy hub is defined as a super node in electrical system receiving distinctive energy carriers such as gas and electricity in...

The future distribution network comprising different energy carriers will include small-scale energy resources (SSERs) and loads, known as a Networked multi-carrier microgrid (NMCMG). This concept not only leads to an efficient reduction in operation costs, but also encompasses the energy transformation between gas and electric networks at combined nodes, as well as district heating networks. I...

Abstract. A number of time resolved optical experiments probing and controlling the spin and charge dynamics of the high mobility two-dimensional electron gas in a GaAs/AlGaAs heterojunction are discussed. These include time resolved reflectivity, luminescence, transient grating, magneto-optical Kerr effect, and electro-optical Kerr effect experiments. The optical experiments provide informatio...

A number of time-resolved optical experiments probing and controlling the spin and charge dynamics of the high-mobility two-dimensional electron gas in a GaAs/AlGaAs heterojunction are discussed. These include time-resolved reflectivity, luminescence, transient grating, magneto-optical Kerr effect, and electro-optical Kerr effect experiments. The optical experiments provide information on the c...

A study was conducted to evaluate the effect of reaction pressure on the toluene disproportionation reaction using ZSM-5 zeolite based catalyst impregnated with molybdenum. Results showed that there is a marked difference in toluene conversion and xylenes selectivity using nitrogen and hydrogen carrier gases and the reaction pressure. Toluene conversion under nitrogen pressure was higher than u...

The influence of MOCVD growth conditions (carrier gas, growth temperature, and V/III ratio) on the AlGaN barrier and the corresponding 2DEG for AlGaN/GaN heterostructures grown on 150 mm silicon is investigated. Hall mobility 2200 cm 2 /V.s, with sheet carrier concentration 8.7e10 12 cm -2 and sheet resistance 326 Ohm/sq, is obtained for AlGaN grown in N2 ambient and with high V/III ratios.