A driving scheme using a pair of differential voltages (Vx, Vy) over a bias voltage is proposed to linearize the dc characteristic (angle versus voltage) of a two-axis MEMS scanner. The micromirror has a gimbal-less structure and is driven by vertical comb-drive actuators in conjunction with a leverage mechanism. At an optimal bias voltage of 53 V, a linear optical scan range of ±3.2◦ is achiev...

The electrokinetically pinched method is the most commonly used mode for sample injection in microchip capillary electrophoresis (microCE) due to its simplicity and well-defined sample volume. However, the limited injection volume and the electrophoretic bias of the pinched injection may limit its universal usage to specific applications. Several hydrodynamic injection methods in microCE have b...

Humidity-dependent current-voltage (I-V) characteristics of Pd-doped vanadium pentoxide nanowires (Pd-VONs) were investigated. Electrical quadruple hysteresis (QH) was observed and attributed to the large amount of water molecules adsorbed on the nanowires. Using QH in Pd-VONs, the reaction of water with PdO was interpreted as the water molecules are desorbed and then dissociated with increasin...

A Novel electrical method, using charge-pumping (CP) technique under bias thermal stress (BTS), has been described in this work. This technique is based on the measurement of the flat-band voltage before and after an applied voltage at high temperature through the use of charge-pumping current. The measured flat band shift, that may be due to effect of certain types of the oxide charges, may be...

We consider quasiparticle charge and energy imbalances in a thin superconductor weakly coupled with two normal-metal electrodes via tunnel junctions at low temperatures. Charge and energy imbalances, which can be created by injecting quasiparticles at one junction, induce excess tunneling current Iex at the other junction. We numerically obtain Iex as a function of the bias voltage Vdet across ...

In this paper, a model for MEMS capacitive microphone is presented for integrated circuits.  The microphone has a diaphragm thickness of 1 μm, 0.5 × 0.5 mm2 dimension, and an air gap of 1.0 μm. Using the analytical and simulation results, the important features of MEMS capacitive microphone such as pull-in voltage and sensitivity are obtained 3.8v and 6.916 mV/Pa, respectively while there is no...

Double-barrier magnetic tunnel junctions with two MgO barriers and three CoFeB layers exhibiting tunneling magnetoresistance TMR values of more than 100% were fabricated. The bias voltage dependence of the TMR ratio is highly asymmetric after annealing at low temperatures, indicating dissimilar CoFeB/MgO interfaces. The TMR effect decays very slowly for positive bias and is only reduced to half...

Spin-dependent properties of single-layer graphene (SLG) have been studied by nonlocal spin valve measurements at room temperature. Gate voltage dependence shows that the nonlocal magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic-nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate v...

The bias dependent interface charge is considered as the origin of the observed non-ideality in current-voltage and capacitance-voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is inv...

We experimentally reveal that the short-range attractive force between a Si tip and a Si(111)-(7 x 7) surface is enhanced at specified bias voltages; we conduct force spectroscopy based on noncontact atomic force microscopy with changing bias voltage at a fixed separation. The spectra exhibit prominent peaks and a broad peak, which are attributed to quantum mechanical resonance as the energy le...