We present a novel GaAs metal–semiconductor field-effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) capping and buffer layers. The MQB structure with (29; 6, 5, 7; 8, 8, 1; 6, 5, 7; 29) periodic stacks was designed to increase effective-potential-barrier height. We demonstrate that, by using the InGaP/GaAs MQB capping layer, the gate Schottky barrier performance and gate...

A tilted two-layer colloidal system is constructed for the study of force-assisted barrier-crossing dynamics over a periodic potential. The periodic potential is provided by the bottom layer colloidal spheres forming a fixed crystalline pattern on a glass substrate. The corrugated surface of the bottom colloidal crystal provides a gravitational potential field for the top layer diffusing partic...