نتایج جستجو برای: band gap diagram

تعداد نتایج: 321192  

The structure and the electronic properties of single-walled zigzag BN and B3C2N3 nanotubes (n, 0; n=4–10) were investigated using first-principles calculations based on a density functional theory. A plane–wave basis set with periodic boundary conditions in conjunction with Vanderbilt ultrasoft pseudo-potential was employed. The energy gap of ZB3C<su...

2011
Ivan Celanovic Rafif E. Hamam Marin Soljačić

Materials and structures that strongly discriminate electromagnetic radiation based on one, or more of its properties (e.g. polarization, frequency) play an enabling role for a wide range of physical phenomena. For example, polarizers can selectively transmit light based on its polarization [1] over a wide range of frequencies; photonic crystals [2] (PhCs) can reflect light of certain frequenci...

ژورنال: :international journal of new chemistry 0

the stable configurations, electronic structure and magnetic properties of b16n16, b8c24, al and p inserted (bc3)8 was studied by performing density functional theory (dft) calculations of the nmr parameters. the results indicate that b8c24 has semiconductivity property and be effectively modified by inserting groups due to the introduction of certain impurity states within the band gap of the ...

2002
E. Yablonovitch

The analogy between electromagnetic wave propagation in multidimensionally periodic structures and electronwave propagation in real crystals has proven to be a fruitful one. Initial efforts were motivated by the prospect of a photonic band gap, a frequency band in three-dimensional dielectric structures in which electromagnetic waves are forbidden irrespective of the propagation direction in sp...

The structure and the electronic properties of single-walled zigzag BN and B3C2N3 nanotubes (n, 0; n=4–10) were investigated using first-principles calculations based on a density functional theory. A plane–wave basis set with periodic boundary conditions in conjunction with Vanderbilt ultrasoft pseudo-potential was employed. The energy gap of ZB3C<su...

Journal: :Physical review letters 2010
Zheng Liu Jian Wu Wenhui Duan Max G Lagally Feng Liu

The evidence that the band gap of Si changes significantly with strain suggests that by alternating regions of strained and unstrained Si one creates a single-element electronic heterojunction superlattice (SL), with the carrier confinement defined by strain rather than by the chemical differences in conventional compositional SLs. Using first-principles calculations, we map out the electronic ...

2004
Yan Luo Nicholas Kioussis

Exact diagonalization calculations reveal that the energy spacing ∆ in the conduction band tunes the interplay between the local Kondo and non local RKKY interactions, giving rise to a “Doniach phase diagram” for a nanocluster with regions of prevailing Kondo or RKKY correlations. The parity of the total number of electrons alters the competition between the Kondo and RKKY correlations. This in...

Journal: :Physical review letters 2014
M Diez J P Dahlhaus M Wimmer C W J Beenakker

The fractal spectrum of magnetic minibands (Hofstadter butterfly), induced by the moiré superlattice of graphene on a hexagonal crystal substrate, is known to exhibit gapped Dirac cones. We show that the gap can be closed by slightly misaligning the substrate, producing a hierarchy of conical singularities (Dirac points) in the band structure at rational values Φ = (p/q)(h/e) of the magnetic fl...

Journal: :Optics express 2008
Nicolas Bonod Evgeny Popov Ross C McPhedran

A biomolecular sensor consisting of a thin metallic grating deposited on a glass prism is studied in the formalism of poles and zeros of the scattering matrix. Surface plasmon resonance is used to increase the sensitivity of the device with respect to a variation of the refractive index of the substrate. It is shown that a direct coupling between counter propagating surface plasmons using doubl...

E. Rajaei M. A. Borji

In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...

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