In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver. The design of a LNA in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity. This situation forces designers to make choices in the de...

This paper presents a current re-use quadrature front end receiver architecture for ISM Band. The proposed architecture is a stacked QLMV cell which consists of a low-noise amplifier (LNA), mixer and voltage-controlled oscillator (VCO), which feeds into the intermediate frequency (IF) load. The LNA is a common source amplifier with Ls source degeneration, a double-balanced Gilbert cell mixer an...

The paper proposes fourth order Butterworth complex filter for the Global Positioning System (GPS) receiver, which the center frequency of complex filter is 2MHz and bandwidth is 2 MHz. The operational amplifier (OPA) is designed as twostage fully differential OPA. The gain bandwidth (GBW) of operation amplifier reaches 300MHz, the gain of the DC is 58.3dB, the phase margin is 5 7  and the pow...

Abstarct Amplification is one of the most basic and prevalent RF/Microwave circuit functions. This paper describes the design of an 11 GHz PHEMT ATF-36077 microwave amplifier. The amplifier is manually designed using conventional technique, Smith chart was used to do a matching of the input and output of the amplifier. A completed design of the amplifier was optimised using Hewlett-Packard Adva...

In this paper, a new method for designing an active dual-band dipole antenna is proposed. The operating frequencies of the proposed antenna are 150 and 450 MHz that are usually used in military applications. Using a series stub is the main idea in the proposed dual-band antenna, where it makes an independent resonance frequency higher than the main resonance frequency of a conventional dipole. ...

A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...

In a class F power amplifier, producing the required short circuit at even harmonics and the open circuit at the odd harmonics at the active device output can substantially increase efficiency of the power amplifier [1, 2]. With such harmonic tuning, the voltage across the active device output and current through it do not contain harmonics of the same order simultaneously. In practice, it is v...

We report the experimental demonstration of a gyrotron traveling-wave-tube amplifier at 250 GHz that uses a photonic band gap (PBG) interaction circuit. The gyrotron amplifier achieved a peak small signal gain of 38 dB and 45 W output power at 247.7 GHz with an instantaneous -3  dB bandwidth of 0.4 GHz. The amplifier can be tuned for operation from 245-256 GHz. The widest instantaneous -3  dB b...