This paper describes the results of optimising three process variables (control factors) to achieve a narrow line width in laser engraving of ITO conductive coatings using the Taguchi technique of experimental design. The laser used is a NEC Q-switched continuous wave (CW) Nd:YAG laser operating at a wavelength of 1.064 μm. The three process variables explored are: Q-switch frequency, speed of ...

A new type of optically controllable, millimeter-wa e ( ) ( ) ( ) MMW attenuator based on high-resisti ity high-R silicon Si wafers and a layered structure is de eloped. A high-R float-zone Si wafer is a lossless dielectric material at microwa e frequency without optical excitation. When an Si wafer is optically excited, free carriers are generated, and the Si wafer becomes a lossy dielectric. ...

A~SZFUCZ In this paper a CMOS highly linear current attenuator is described. The circuit is suited for both differential and single input currents. The current gain is electronically variable between -1 and +1 by means of two controlling currents. A simple additional circuit is described to obtain a gain that is linearly dependent on a single control current. Then the circuit can be used as a f...

Lymphocytes of the gamma delta (γδ) T-cell lineage are evolutionary conserved and although they express rearranged antigen-specific receptors, a large proportion respond as innate effectors. γδ T-cells are poised to combat infection by responding rapidly to cytokine stimuli similar to innate lymphoid cells. This potential to initiate strong inflammatory responses necessitates that inhibitory si...