A convenient methodology for the highly stereoselective synthesis of unsymmetrical (1E,3E)-1,4-disubstituted 1,3-dienes based on palladium-catalyzed Hiyama cross-coupling reaction of 1-(triethoxysilyl)-substituted buta-1,3-dienes with aryl iodides is reported.

FeCl(3) in combination with bisphosphine ligands represents an efficient catalyst system for the cross-coupling of aryl- and alkyl thiols with aryl iodides, a broad spectrum of functional groups can be tolerated during the catalysis.

A new synthetic approach to arylboronic esters from arylzinc reagents with boryl electrophiles MeOB(OR)2 has been developed. Furthermore, this protocol could be applied to the cyclization/borylation of alkynylaryl iodides to afford cyclized vinylboronic esters.

ABSTRACT The International Union of Pure and Applied Chemistry (IUPAC) project of collection, compilation, and critical evaluation of solubility data of bromides and iodides of the scandium group and all lanthanides in water and aqueous systems containing either halide acids, halide salts, or organic compounds is under preparation. As a result of their similarity to the chlorides, which were re...

Neodymium tri-iodide reacts with Group 12 metal (M; M = Zn, Cd, Hg) iodides to form heterometallic compounds. These Lewis acidic M cleave Nd-I bonds to give either ionic ([(THF)(5)NdI(2)][MI(3)THF]; M = Zn, Cd) or charge-neutral [(THF)(5)NdI(micro(2)I)HgI(3)] compounds. Differences in structure are interpreted primarily in terms of M-L bond strengths, rather than Nd-L bond strengths. Experiment...

Significance: Organozinc compounds are very useful intermediates in synthesis of complex organic molecules due to their high reactivity combined with an excellent tolerance of functional groups. So far, the direct insertion of commercial zinc dust into organic halides was limited only to alkyl iodides and tertiary bromides, which diminished its synthetic value. Herein, a new method, allowing th...

Sequential multiple methylene (CH2) insertions into adsorbed methyl species on clean gallium-rich GaAs(100)-(4 x 1) occurs to form higher alkenes (ethene, propene, butene) and two higher alkyl iodides (iodoethane, iodopropane), not reported for a semiconductor surface previously.